Articles you may be interested inPhase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method Low-temperature synthesis of silica-enhanced gallium nitride nanowires on silicon substrate

In this Article, bulk-quantity one-dimensional polyaniline (1D PANI) nanowire/tubes with rough surface were prepared by a simple chemical oxidation method. This kind of PANI nanostructure can not only remove Cr(VI) rapidly and effectively in one step from aqueous solution by reducing Cr(VI) to Cr(III) as well as adsorbing the reduced Cr(III) simultaneously, but also be easily regenerated for reuse. During the removal of Cr(VI) process, the as-synthesized PANI was oxidized from emeraldine salt to pernigraniline, and pernigraniline could be reconverted into emeraldine salt by acid treatment. In addition, the morphology of the PANI was not changed after used for Cr(VI) removal. This study not only provides a facile way to fabricate bulk-quantity 1D PANI nanostructure, but also shows a reproducible material for removal of toxic Cr(VI) from wastewater.

Photonic crystals made of air pores in anodic alumina were prepared by electrochemical oxidation of aluminium and subsequent chemical etching. Optical photographs and transmission spectra prove the existence of a photonic band gap in the optical sprectrum for this porous material. The colour of the sample and the diffraction peak position in the transmission spectra could easily be adjusted in the chemical etching process. This method could provide a possible approach to producing large-area optical photonic crystals cheaply and rapidly.

Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1–x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1–x nanowires with the corresponding composition x.

The melting behavior of Zn nanowires embedded in the holes of porous anodic alumina membrane with different diameters was studied by using the differential scanning calorimetry. The crystalline structure and morphology of Zn nanowire arrays were characterized by x-ray diffraction and transmission electron microscopy. The melting temperature of Zn nanowire arrays shows the strong dependence on nanowire sizes. The melting temperature was curvilinear with the reciprocal of the diameter of nanowires with the change of the diameter, which was discussed in terms of size-dependent heat of fusion change.

Ordered arrays of Bi/Sb superlattice nanowires with diameters of about 50 nm have been produced by pulsed electrodeposition technique into the pores of anodic alumina membrane (AAM). The structure of Bi/Sb superlattice nanowire can be modulated by controlling the electrodeposition conditions.

Large-area ordered Ni nanowire arrays with different diameters have been fabricated by the direct current electrodeposition into the holes of porous anodic alumina membrane. The crystal structure and micrograph of nanowire arrays are characterized by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy. The results indicate that the growth orientation of Ni nanowires turns from [110] to [111] direction with increasing diameters of nanowires. The mechanism of the growth was discussed in terms of interface energy minimum principle. The size-dependent orientation of Ni nanowire arrays has the important significance for the design and control of nanostructures.

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