1999
DOI: 10.1063/1.125046
|View full text |Cite
|
Sign up to set email alerts
|

Large-scale synthesis of single crystalline gallium nitride nanowires

Abstract: Articles you may be interested inPhase separations of single-crystal nanowires grown by self-catalytic chemical vapor deposition method Low-temperature synthesis of silica-enhanced gallium nitride nanowires on silicon substrate

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

2
131
0

Year Published

2001
2001
2015
2015

Publication Types

Select...
6
4

Relationship

0
10

Authors

Journals

citations
Cited by 269 publications
(139 citation statements)
references
References 18 publications
2
131
0
Order By: Relevance
“…Therefore, a wide bandgap semiconductor material would be preferred for field-emission. There have been reports on SiC [3], and GaN [4], [5] the fabrication of self-assembled ZnO nanowires [6]- [9]. ZnO is a wide bandgap semiconductor with a high excitonic binding energy (60 meV), and hence can facilitate low-threshold stimulated emission at room temperature.…”
mentioning
confidence: 99%
“…Therefore, a wide bandgap semiconductor material would be preferred for field-emission. There have been reports on SiC [3], and GaN [4], [5] the fabrication of self-assembled ZnO nanowires [6]- [9]. ZnO is a wide bandgap semiconductor with a high excitonic binding energy (60 meV), and hence can facilitate low-threshold stimulated emission at room temperature.…”
mentioning
confidence: 99%
“…[1][2][3][4][5][6] These intriguing properties of 1D nanomaterials offer great opportunities to use them as potential functional and structural nanobuilding blocks in nanoscale electronic, optical, bioengineering, and micro/nanoelectromechancial systems applications, and have triggered great efforts to synthesize various 1D nanomaterials, such as tubes and/or wires of C, 4,7-10 B, [11][12][13] Si, [14][15][16] SiO 2 , [17][18][19] and GaN, [20][21][22] to name a few.…”
mentioning
confidence: 99%
“…The growth process of GaN nanowires in this study is thought to be similar to that in a reaction using nanometer confined reactors such carbon nanotubes 15 and anodic alumina membranes. 16 Calcination of a mixture of γ-Ga 2 O 3 and carbon, if it was not pressed into pellets, gave neither GaN nanowires nor microcrystals. Thus, the confinement of GaN in voids among pressurized carbon particles might be responsible for the growth of nanowires and microcrystals of GaN because the confinement is expected to be very favorable for supersaturation of GaN vapor.…”
Section: Resultsmentioning
confidence: 99%