Bi/BiSb superlattice nanowires ͑SLNWs͒ with a controllable and very small bilayer thickness and a sharp segment interface were grown by adopting a charge-controlled pulse electrodeposition. The deposition parameters were optimized to ensure an epitaxial growth of the SLNWs with a preferential orientation. The segment length and bilayer thickness of the SLNWs can be controlled simply by changing the modulating time, and the consistency of the segment length can be well maintained by our approach. The Bravais law in the electrodeposited nanowires is verified by the SLNW structure. Nanostructured thermoelectric materials can have dramatically higher efficiencies than their bulk counterparts. [1][2][3][4][5][6][7][8][9] The effectiveness of a thermoelectric material could be linked in an approximate way to the dimensionless thermoelectric figure of merit, ZT = S 2 T/, where S, , T, and are, respectively, the Seebeck coefficient, the electrical conductivity, the temperature, and the thermal conductivity.1 Compared to simple quantum wires, quantum dots, quantum wells, and two-dimensional superlattices, the quantum dot superlattices and superlattice nanowires ͑SLNWs͒ exhibit even greater advantages in the enhancement of the figure of merit ͑ZT͒.
3Because the heterogeneous interfaces between the nanodots can block the phonon conduction along the wire axis and thus reduce the lattice thermal conductivity, while the electrical conduction can be sustained and may benefit from the unusual electronic band structures, the SLNWs are especially attractive for thermoelectric applications.10 Recent studies further proved that the increased phonon scattering by grain boundaries would increase the ZT value. 2,8,9,11 The electron and phonon properties of SLNWs can be manipulated by many parameters, such as segment length, wire diameter, crystal orientation, bilayer thickness, and so on. [16][17][18][19][20][21][22][23][24][25] However, all these SLNWs are synthesized by modulating direct electrodeposition, the crystallinity is relatively not very high, and the interfaces between segments are not distinct. The pulsed electrodeposition, with various processing parameters and higher instantaneous current density, exhibits marked advantages over dc electrodeposition in controlling the deposited grain size, surface morphology, and preferred orientation, and proved to be a viable technological tool in materials engineering. 26,27 Bi is especially favorable for studying low dimensional systems and for low temperature thermoelectric applications due to its small electron effective mass and highly anisotropic Fermi surface.28 Calculations have proved that an unprecedented enhancement of the ZT value could be obtained in the Bi 1−x Sb x alloy nanowire system with the variation in x and the diameter of nanowires compared to pure Bi nanowires.29 Some promising work has been done on the Bi 1−x Sb x alloy 30-33 and other Bi-based 34,35 nanowire systems. As a result, the design and fabrication of SLNWs composed of Bi 1−x Sb x segment nanowires is...