Foot-and-mouth disease virus (FMDV) infection is responsible for the heavy economic losses in stockbreed-

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Semiconductors and metals can form an Ohmic contact with an electric field pointing to the metal, or a Schottky contact with an electric field pointing to the semiconductor. If these two types of heterojunctions are constructed on a single nanoparticle, the two electric fields may cause a synergistic effect and increase the separation rate of the photogenerated electrons and holes. Metal Ni and Ag nanoparticles were successively loaded on the graphitic carbon nitride (g‐C3N4) surface by precipitation and photoreduction in the hope of forming hybrid heterojunctions on single nanoparticles. TEM/high‐resolution TEM images showed that Ag and Ni were loaded on different locations on C3N4, which indicated that during the photoreduction reaction Ag+ obtained electrons from C3N4 in the reduction reaction, whereas oxidation reactions proceeded on Ni nanoparticles. Photocatalytic hydrogen production experiments showed that C3N4‐based hybrid heterojunctions can greatly improve the photocatalytic activity of materials. The possible reason is that two heterojunctions could form a long‐range electric field similar to the p‐i‐n structure in semiconductors. Most of the photogenerated carriers were generated and then separated in this electric field, thereby increasing the separation rate of electrons and holes. This further improved the photocatalytic activity of C3N4.

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Based on first-principles calculations, the adsorption of NO and NO2 gas molecules on the α-In2Se3 monolayer have been studied. The adsorption configuration, adsorption energy, electronic structure and charge transfer properties are investigated. It is found that the charge transfer processes of NO and NO2 adsorbed on the surface of α-In2Se3 monolayer exhibit electron donor and acceptor characteristics, respectively. After the adsorption of the molecules, the α-In2Se3 monolayers have new states near the Fermi level induced by NO and NO2, which can trigger some new effects on the conducting and optical properties of the materials, with potential benefits to gas selectivity. The present work provides new valuable results and theoretical foundation for potential applications of the In2Se3-based gas sensor.

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