No abstract

High conductivity p-type CdS was formed by ion implanting Bi into n-type single crystals. Hall measurements and lifetime studies were performed on the implanted layers. p-n junctions were formed in high conductivity n-type material and light emission observed in the forward direction. By making two independent contacts to the p-type layer and measuring their I-V characteristics, it was determined that they were not rectifying.

p-Type conductivity and stored electron charge densities as large as 1.3 × 10−7 coul/cm2 have been observed in high-resistivity CdS crystals. These properties were studied by photovoltaic, photopolarization, and thermo-electric power measurements.

Low power transverse optical bistability near bound excitons in cadmium sulfide Appl. Phys. Lett. 44, 574 (1984); 10.1063/1.94844Stopping cross sections for 0.25-3.0MeV 4He ions in cadmium sulfide A new experimental technique has been used 'to measure the stopping power of CdS for He ions. This technique consists of measuring the energy spectrum of either He ions backscattered from implanted Bi or of a particles emitted by an implanted radioactive isotope, such as P02IO. A thin layer is then etched ofT the surface of the sample and the energy spectrum is measured again. The stopping power is calculated from these two spectra and the known thickness of the removed layer. These measurements and calculations have been made for energies ranging from 0.963 to 5.3 MeV with accuracies between 12% and 16%.

This paper is concerned with the properties of evaporated titanium films and their oxides. Thin films of titanium (100 to 500 Å) were evaporated at pressures below 5 × 10−9 Torr and subsequently oxidized. Amorphous quartz and single crystals of alkalai halides and CaF2 were used as substrates. Evaporations were performed at substrate temperatures in a range from 25 ° to 500 °C. The structures of the films were investigated prior to, during, and following oxidation by employing reflection electron diffraction. The uv transmission spectra of the oxidized films were taken after removing them from the vacuum chamber.