Stopping power of cadmium sulfide for helium ions

Abstract

Low power transverse optical bistability near bound excitons in cadmium sulfide Appl. Phys. Lett. 44, 574 (1984); 10.1063/1.94844Stopping cross sections for 0.25-3.0MeV 4He ions in cadmium sulfide A new experimental technique has been used 'to measure the stopping power of CdS for He ions. This technique consists of measuring the energy spectrum of either He ions backscattered from implanted Bi or of a particles emitted by an implanted radioactive isotope, such as P02IO. A thin layer is then etched ofT the surface of the sample and the energy spectrum is measured again. The stopping power is calculated from these two spectra and the known thickness of the removed layer. These measurements and calculations have been made for energies ranging from 0.963 to 5.3 MeV with accuracies between 12% and 16%.

Ion Backscattering Study of Cu2 S Formation on Single Crystal CdS

“…Stopping power data for He ions in CdS are limited (8) and none exist for He in Cu2S, so values for Cd, Cu, and S were used (9) to generate values of the stopping power of CdS and CuS0.5 for He ions as a function of energy by assuming Bragg's Rule for additivity of atomic stopping powers applied to CdS and CuS0..~. These values were then fit to the Brice formula (10) to give an analytic expression for the electronic stopping power, ,.…”