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High conductivity p-type CdS was formed by ion implanting Bi into n-type single crystals. Hall measurements and lifetime studies were performed on the implanted layers. p-n junctions were formed in high conductivity n-type material and light emission observed in the forward direction. By making two independent contacts to the p-type layer and measuring their I-V characteristics, it was determined that they were not rectifying.

Results of measurements of electrical conductivity of single crystals of Ag, 6I"W40" in the temperature range 473-175 K show the existence of two first-order transitions at 246 and 197 K; the phases are labeled a, P, y in order of decreasing temperature. Within experimental error, the principal conductivity axes of the a phase are 4, b, and 8 over its temperature range of existence. At 25'C, the principal conductivities are 0.120, 0.085, and 0.083 0 'cm ', respectively, and the average conductivity, 0.097 0 'cm ', is 1.6 times the best value obtained from conductivity measurements on polycrystalline material. It is shown that the logio(0T) vs T data for the a phase imply that the activation enthalpies of motion are temperature dependent. It is also likely that very few Ag+ ions are thermally excited from the immobile to the mobile category. The magnitudes of the activation enthalpies of motion of the P and y phases appear to be constant, and suggest that there is greater (possibly complete) order in the y than in the P phase and greater order in the P than in the a phase.

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