HIGH-RESISTIVITY <i>p</i>-TYPE CADMIUM SULFIDE

Chernow, F.; Courtens, E.; Douma, Mark; Goodman, Larry J.

doi:10.1063/1.1754684

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…On the basis of these experiments it seems likely that the pressure minimum in the CdS phase diagram, corresponding to the equilibrium composition during sublimation, is shifted at 750"c-and probably at higher temperatures-towards the sulphur-rich side of the stoichiometric composition. The sulphur excess should be of the order of This result is in agreement with the possibility of obtaining p-type CdS by very rapid cooling from the growth temperature, as recently reported (Chernow 1966).…”

Section: Resultssupporting

confidence: 91%

A study of CdS thin-film deposition

Bujatti¹

1968

J. Phys. D: Appl. Phys.

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The CdS deposition is carried out in a modified vacuum furnace. The substrate is heated by radiation from the crucible heater, and the temperature distribution is properly controlled through a system of tubes and screens. It is found that the temperature gradient at the substrate is an important parameter determining the orientation of the samples. By controlling this parameter oriented films of high resistivity are obtained. The apparatus and operation are extremely simple.

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Section: Resultssupporting

confidence: 91%

A study of CdS thin-film deposition

Bujatti¹

1968

J. Phys. D: Appl. Phys.

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“…So Nirk et al [4]andPhil WonYu andPark [3]have found undopedp-ZnSe; undopedp-CdSe has been obtained by Itakura and Toyoda [6] and by Baubinas et al [5, 71. However, in contradiction with [2], Chernow et al [8] and Kalinkin et al [9] have prepared undoped p-CdS. All these p-type materials have been obtained when grown (or treated) under excess chalcogen pressure in order to increase the density of acceptor defects and to reduce that of donor defects.…”

Section: Introductionmentioning

confidence: 98%

Analysis of the preparation conditions of undoped p-CdSe, p-CdS, p-ZnSe, and n-ZnTe single crystals

Sakalas

1975

Phys. Stat. Sol. (a)

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By a simple analysis the quenching temperatures and partial pressures of components were found at which undoped p‐CdSe, p‐CdS, p‐ZnSe might be obtained. It follows, that p‐CdSe and p‐CdS may be produced by heating the crystals under excess chalcogen pressures at temperatures not exceeding 1140 °K for CdSe and 1040 °K for CdS. p‐ZnSe may be obtained in a wide range of temperatures and pressures. Experimental results are in agreement with the given analysis. As follows from the analysis, ZnTe is likely to exist only of p‐type.

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DC galvanomagnetic properties in a single crystal of n-type CdSe optimally annealed in molten Cd

Kulshrestha

Pandya

Goyal

et al. 1986

phys. stat. sol. (a)

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DC galvanomagnetic properties are measured and analysed in the temperature range 77 to 440 K for an undoped single crystal of n‐type CdSe, optimally annealed in molten cadmium for ≈︁ 400 h. The polaron coupling constant α is estimated from the measured Hall mobility data at low and intermediate temperatures by identifying a temperature region wherein only the polar optical phonon scattering operates in the conduction band. The deformation potential Eb in the conduction band of CdSe is obtained from the measured Hall mobility data in the high‐temperature region wherein the deformation potential scattering also operates effectively.

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HIGH-RESISTIVITY p-TYPE CADMIUM SULFIDE

Abstract: p-Type conductivity and stored electron charge densities as large as 1.3 × 10−7 coul/cm2 have been observed in high-resistivity CdS crystals. These properties were studied by photovoltaic, photopolarization, and thermo-electric power measurements.

Cited by 6 publications

References 4 publications

A study of CdS thin-film deposition

A study of CdS thin-film deposition

Analysis of the preparation conditions of undoped p-CdSe, p-CdS, p-ZnSe, and n-ZnTe single crystals

DC galvanomagnetic properties in a single crystal of n-type CdSe optimally annealed in molten Cd

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