Analysis of the preparation conditions of undoped p-CdSe, p-CdS, p-ZnSe, and n-ZnTe single crystals

Abstract

By a simple analysis the quenching temperatures and partial pressures of components were found at which undoped p‐CdSe, p‐CdS, p‐ZnSe might be obtained. It follows, that p‐CdSe and p‐CdS may be produced by heating the crystals under excess chalcogen pressures at temperatures not exceeding 1140 °K for CdSe and 1040 °K for CdS. p‐ZnSe may be obtained in a wide range of temperatures and pressures. Experimental results are in agreement with the given analysis. As follows from the analysis, ZnTe is likely to exist only of p‐type.

Thermal treatment of CdSe single crystals in Se vapour

“…The calculation was carried out assuming that the dominating intrinsic donor defects a r e doubly ionized, which follows -from the conductivity and high-temperature Hall effect (9,10). Dominating intrinsic acceptor defects are assumed to be singly ionized in (8). However, in calculations the formation constant of intrinsic acceptor defects has been neglected (in equation (14) of reference (8) it is accepted that a ' a 1 ) .…”

“…The results obtained are proved experimentally. The method used to calculate the vapour pressures of the components and the annealing temperature is analogous as in (8). We have also used the reaction X !…”