Electrical and photoelectrical properties of undoped thermally annealed n‐ and p‐type single crystals of CdSe have been studied. Two types of scattering centres are found: the first type (Ec – 0.75) eV is caused by cadmium vacancies, the second type (Ec – 0.6) eV by selenium vacancies. The strong dependence of carrier mobility on the population of these centres shows their multiple charges, possibly, double charges. The centres at (Ec – 0.75) eV also serve as fast recombination centres. Interstitial cadmium is either neutral or singly charged, but never doubly charged.
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