The relationship between the characteristics of FET's obtained by direct ion implantation and the properties of a GaAs semi-insulating substrate was investigated. A positive correlation was observed between the dislocation etch-pit density, the as-grown mobility, the mobility after implantation, and the device transconductance. The observation of dislocations' effect on mobility is consistent with the model that dislocations act as segregation centers for imperfections. Localized substrate inhomogeneties are shown to affect the GaAs FET's frequency performance via the mobility.
A new monolithic ceramic technology especially developed for high power applications is proposed. Broadband power ampllfiers based on this technology have demonstrated output powers in the range of one to two watts over the 6-18 GHz frequency band, with good efficiency and high reproducibility.
The cathodoluminescence (CL) imaging technique is applied to the characterization of semi-insulating GaAs substrates after an extrinsic gettering treatment. A reverse contrast CL image is found for the gettered material. This study provides evidence for the physical mechanism taking place in the gettering process and contributes to the understanding of the effect of dislocations on device performance.
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