In Sec. II of this work, we briefly recall the various ways of defining the diffusion coefficient D and discuss their identity in high-field conditions and in very high frequency operations. In Sec. III, theoretical values obtained by the Monte Carlo method for high static field operations in Si and GaAs are reported and discussed. In Sec. IV, the variations of diffusion values with the operational frequency or with the ’’observation’’ or sample time are studied and tentatively explained.

Articles you may be interested inStatic model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect Appl.Conductance modulation of submicrometer metal-oxide-semiconductor fieldeffect transistors by singleelectron trapping

No abstract

Under ultraviolet (UV) illumination of GaAs with photon energies above 3.5 eV, Si–H complexes are known to be efficiently dissociated at room temperature. Studying the dissociation kinetics of Si–H and Si–D complexes in GaAs, we have observed that, for a given incident UV photon density, the concentration of dissociated Si–D complexes is 10–20 times below the concentration of dissociated Si–H complexes. This strong isotope effect is discussed under the light of recent excitation models of Si–H(D) bonds at the surface of silicon and at the Si/SiO2 interface.

No abstract

No abstract

No abstract

No abstract