Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's

Cappy, A.; Carnez, B.; Fauquembergues, R.; Salmer, G.; Constant, E.

doi:10.1109/t-ed.1980.20166

Cited by 99 publications

(14 citation statements)

References 9 publications

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“…However, the slower velocity of the holes at these field strengths leads to a very broad hole pulse and will limit the available bandwidth. On the other hand, the use of electron overshoot [51] in "thin" detectors with highly sub-pm finger spacings, where the time of flight is on the scale of the energy relaxation time (-0.2 ps), may be a useful way of increasing the response speed [57].…”

Section: Ieee Journal Of Quantum Electronics Vol 21 No 3 March 1991mentioning

confidence: 99%

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Soole

Schumacher²

1991

IEEE J. Quantum Electron.

327

117

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Section: Ieee Journal Of Quantum Electronics Vol 21 No 3 March 1991mentioning

confidence: 99%

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Soole

Schumacher²

1991

IEEE J. Quantum Electron.

327

117

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“…InAs and InGaAs are attractive channel materials for high speed, low power MOSFETs due to their very high intrinsic electronic mobility ͑ϳ4 ϫ 10 4 and 1 ϫ 10 4 cm 2 V −1 s −1 ͒ compared to Si ͑ϳ1.5 ϫ 10 3 cm 2 V −1 s −1 ͒ at 300 K. 5,6 A few InAs based FETs ͑Refs. 2 and 7͒ and many InGaAs based MOSFETs ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

Shen

Chagarov

Feldwinn

et al. 2010

The Journal of Chemical Physics

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Interfacial bonding geometry and electronic structures of In(2)O on InAs and In(0.53)Ga(0.47)As(001)-(4×2) have been investigated by scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS). STM images show that the In(2)O forms an ordered monolayer on both InAs and InGaAs surfaces. In(2)O deposition on the InAs(001)-(4×2) surface does not displace any surface atoms during both room temperature deposition and postdeposition annealing. Oxygen atoms from In(2)O molecules bond with trough In/Ga atoms on the surface to form a new layer of O-In/Ga bonds, which restore many of the strained trough In/Ga atoms into more bulklike tetrahedral sp(3) bonding environments. STS reveals that for both p-type and n-type clean In(0.53)Ga(0.47)As(001)-(4×2) surfaces, the Fermi level resides near the valence band maximum (VBM); however, after In(2)O deposition and postdeposition annealings, the Fermi level position is close to the VBM for p-type samples and close to the conduction band minimum for n-type samples. This result indicates that In(2)O bonding eliminates surface states within the bandgap and forms an unpinned interface when bonding with In(0.53)Ga(0.47)As/InP(001)-(4×2). Density function theory is used to confirm the experimental finding.

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“…For submicron devices knowledge of not only the low-field mobility but also the high-field drift velocity is important [36,37]. Hinckley et al [38] calculated the 300 K high-field in-plane drift velocities in bulk strain Si 1−x Ge x Figure 12.…”

Section: Fully Coherent Si/si X Ge 1−x /Si Structuresmentioning

confidence: 99%

SiGe heterostructures for FET applications

Whall

Parker

1998

J. Phys. D: Appl. Phys.

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The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and III-V modulation-doped FETs. In this article the electrical properties of this semiconductor system and the associated materials challenges are discussed, and some of the more important device applications are reviewed.

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Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's

Cited by 99 publications

References 9 publications

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces

SiGe heterostructures for FET applications

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