InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Impact of Nanograting Phase-Shift on Light Absorption Enhancement in Plasmonics-Based Metal-Semiconductor-Metal Photodetectors

“…The strong interaction of a nanostructured metal grating with an incident light enables trapping the light through the metal finger slit into the semiconductor substrate, leading to substantial improvement in light absorption, and opening the way for a wide range of potential applications, such as optical fiber communications, high-speed chip-to-chip interconnects, and high-speed sampling [2,3].…”

“…The speed of MSMPDs can be limited intrinsically by the carrier transit time between the electrodes. The interdigitated electrodes in MSM-PDs result in a huge increase in bandwidth and reduction in dark current, in comparison to conventional PIN photodiodes with active areas of similar size [2][3][4]. Recently, the use of surface plasmon-assisted effects has been reported for the development of MSM-PDs with a highresponsivity bandwidth product [5,6].…”

Nano-patterned high-responsivity GaAs metal-semiconductor-metal photodetector

“…The monolithic design, integration with standard VLSI circuitry, high speed performance, and applicability to 2-D array layouts make the metal semiconductor metal photodetector (MSM-PD) a good candidate for several applications such as high-speed optical interconnect, highspeed sampling, and optical fiber communication system components [1][2]. Due to their lateral geometry, MSM-PDs have much smaller capacitance per unit area in comparison to standard p-i-n photodiode with same active area.…”

High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

“…Metal-semiconductor-metal photodetectors (MSM-PDs) are very attractive devices due to their potential applications in optical fiber communication systems, high-speed chip-tochip interconnects, and high-speed sampling. 1,2 Due to their lateral geometry, MSM-PDs have much smaller capacitance per unit area in comparison to standard p-i-n photodiode with same active area. The surface reflectivity and the shadowing due to the metal fingers prevent an ideal MSM-PD from achieving external quantum efficiency greater than 50% for equal electrode width and spacing.…”