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Double-mesa type SiGe heterojunction bipolar transistors (HBTs) have been improved by increasing the base Gumme1 number and by using a thin, highly doped launcher layer between the base and the collector. In addition] the contact resistance of the base contact has been reduced. Hence, it was possible to obtain a record maximum frequency of oscillation up to 160 GHz for a 2-emitter finger HBT in common emitter configuration.

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This paper presents a 64-84-GHz phase-locked loop (PLL) realized in a low-cost 80-GHz HBT technology. The circuit consists of a wide tuning-range voltage-controlled oscillator, a push-push frequency doubler, a divide-by-32 frequency divider, a phase detector and an active loop filter. The measured phase noise at 1-MHz offset is 106 dBc/Hz. The output power is 2.5 dBm at 64 GHz, and it slowly decreases to 8.1 dBm at 84 GHz, with a maximum dc power consumption of 517 mW. To the authors' knowledge, the circuit achieves the widest frequency tuning range and its in-band phase noise is the lowest among the fully integrated-band PLLs reported to date. Index Terms-Heterojunction bipolar transistors (HBTs), millimeter-wave (mm-wave) integrated circuits (ICs), phase-locked loops (PLLs).

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Abstract-A short range 3.1 -10.6 GHz single band ultrawideband (UWB) pulse radar system is presented. The transmitter consists of a pulse generator that is connected to a broadband monopole antenna. The generated pulse shape is similar to the fifth derivative of the Gaussian bell shape and makes efficient use of the allocated FCC UWB frequency mask. The receiver is realized with a single-ended low noise amplifier and active single-ended to differential converters that drive the input ports of an analog correlator which uses pulse sequences as template signals. Measurements show a resolution capability of the radar system in the millimeter range. All active circuits have been realized in a low cost 0.8 µm SiGe HBT technology.

Abstract-In this paper, propagation properties of both standard and multilayer coplanar lines on different types of silicon substrates, as well as a number of quasi-lumped and stub-type circuit elements, are investigated. For the transmission lines, emphasis is placed on losses. As examples for circuit elements, a lumped parallel resonator and a high-low impedance low-pass filter are demonstrated.

Abstract-The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-m SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 mm 2 and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.Index Terms-Dipole antennas, heterojunction bipolar transistors (HBTs), monolithic microwave integrated circuit (MMIC) receivers. I. INTRODUCTIONT HE development of monolithic -band RF frontends in Si/SiGe processes, such as the fully integrated receivers reported in [1] and [2], enables the design of low-cost shortrange radar and communication devices for the 24-GHz industrial-scientific-medical (ISM) band. Since all high-frequency components of the receiver, including the low-noise amplifier (LNA), local oscillator (LO), and downconversion mixer, reside on the same chip, no high-frequency interconnects between the building blocks of the receiver are needed. However, the package still has to provide a low-loss high-frequency interconnect to the off-chip antenna. This last off-chip RF interconnect could be removed if the antenna is integrated on the same chip as the rest of the frontend.On-chip antennas have traditionally been considered for III-V monolithic microwave integrated circuit (MMIC) processes where the high-resistivity substrate with a backside ground-plane metallization can be used for microstrip circuits and patch antennas. In the case of Si/SiGe high-frequency Manuscript received September 29, 2006; revised February 21, 2007 circuits, lumped passive elements are commonly used instead of transmission line components due to the absence of backside metallization, and high losses in the silicon substrate. The use of lumped passive elements also yields comparatively compact circuit layouts (less than 1.5 mm for the receiver reported in [1]), which, in turn, reduces the cost of the manufactured chips. As a small die size precludes the integration of -band high-directivity antennas, the main requirements for an on-chip antenna are low area consumption and high radiation efficiency in the presence of the silicon substrate. The antenna feed type (balanced or single ended) should preferably match the integrated circuit (IC) topology to avoid the need for baluns. The half-wave dipole antenna offers a balanced feed, and is thus suitable for integration with differentially designed integrated receivers and transmitters. A 10-GHz on-chip dipole connected to a voltage-controlled oscillator (VCO) has been demonstrated in SiGe HBT technology [3], but poor radiation efficiency (10%) was reported due to high substrate losses. Micromachined meander dipole antennas [4] have been suggested as a way of integrating compact high-efficiency antennas on the low-re...