Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics

Abstract

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Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation

“…Hydrodynamic and energy balance simulation models require, as additional inputs, the energy and momentum relaxation times s E , s m as a function of the average carrier energy. This information has been obtained from bulk Monte Carlo simulation following the approach described in [22,23] (see Fig. 6).…”

Global modeling of carrier-field dynamics in semiconductors using EMC–FDTD

“…Hydrodynamics transport models and driftdiffusion models have been used successfully in place of EMC in many cases [7,[26][27][28][29][30][31][32][33][34][35] offering decreased computational overhead [7]. Numerical simulations combining full-wave electromagnetic solutions via modern FDTD with particle-based transport models via EMC were first reported by El-Ghazaly, Joshi, and Grondin in 1990 [36].…”

Harmonic solution of semiconductor transport equations for microwave and millimetre-wave device modelling

“…In general, the modelling of a very high-frequency device will include an electromagnetic analysis of pads and passive access regions, coupled to the analysis of charge transport within the active semiconductor layer (the channel) [1]. Although the problem is in general a three-dimensional (3D) one, a practical approach considers the actual charge transport in the channel of a field-effect transistor to be essentially one-dimensional (1D) from source to drain, with the vertical dimension taken into account by means of a channel-control law (the quasi-2-dimensional approach [2][3][4][5]). This approach is especially correct in the case of devices based on a 2D electron gas at a heterointerface: charge control mechanisms take place in the region where the charges move along the horizontal interface.…”