Diffusion and the power spectral density and correlation function of velocity fluctuation for electrons in Si and GaAs by Monte Carlo methods

Abstract

In Sec. II of this work, we briefly recall the various ways of defining the diffusion coefficient D and discuss their identity in high-field conditions and in very high frequency operations. In Sec. III, theoretical values obtained by the Monte Carlo method for high static field operations in Si and GaAs are reported and discussed. In Sec. IV, the variations of diffusion values with the operational frequency or with the ’’observation’’ or sample time are studied and tentatively explained.

Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation

“…Noise and spreading diffusivity have been shown to coincide in the low-frequency limit [29]. A comparison is presented in Fig.…”

Subthreshold Mobility Extraction for SOI-MESFETs

“…Prior work has extracted the diffusion Tarik coefficient for various materials [4][5][6]. Diffusion is related to the spatial spreading of an ensemble of carriers with time as the ensemble responds to both applied drift forces and random forces, such as collision events.…”

Thermal noise as a spectroscopic tool to determine transport properties

“…Specifically, the experimental measurement of thermal noise is treated in a spectroscopic manner, thus obtaining the electron relaxation time, diffusion coefficient, mobility, electrical resistivity, electronic thermal conductivity and the Lorenz number. Previous work in this area appears to have focused on numerically extracting the correlation function from molecular dynamics simulations [7][8][9][10][11], while an extensive literature search has revealed no published reports on the acquisition of transport properties through actual experimental voltage or current fluctuation data. Additionally, the resulting data obtained from DES represents a simpler method to obtain multi-transport properties that are otherwise difficult to obtain, especially for low dimensional materials such as nanostructures.…”