In Sec. II of this work, we briefly recall the various ways of defining the diffusion coefficient D and discuss their identity in high-field conditions and in very high frequency operations. In Sec. III, theoretical values obtained by the Monte Carlo method for high static field operations in Si and GaAs are reported and discussed. In Sec. IV, the variations of diffusion values with the operational frequency or with the ’’observation’’ or sample time are studied and tentatively explained.
As a first approach to the study of strained pseudomorphic materials, we have used a Monte Carlo method to calculate the effect of strain on electron transport properties of bulk InGaAs. Strain-induced velocity reduction is found to be much more pronounced for InGaAs grown on GaAs substrate than for InGaAs grown on InP substrate.
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