Noise modeling in submicrometer-gate FET's

Carnez, B.; Cappy, A.; Fauquembergue, R.; Constant, E.; Salmer, G.

doi:10.1109/t-ed.1981.20431

Cited by 50 publications

(11 citation statements)

References 11 publications

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“…[16]. From the circuit design point of view‚ the noise figure device scaling can be easily determined.…”

Section: B Noise Characteristicmentioning

confidence: 99%

“…Low-noise and high-breakdown AlGaN/GaN HEMTs will eliminate the need for protection circuits such as diode limiter which increases receiver noise figure by ~1 dB. In addition to low noise figure, the other desirable features of devices suitable for LNA implementations include high gain and high linearity [15]- [16]. Design of a specific structure for the high-electron-mobility transistors (HEMTs) devices by A.…”

Section: Introductionmentioning

confidence: 99%

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Compare noise characteristic of DC-HEMT and HEMT

Sadeghi

Vadizadeh

Faez

2013

2013 21st Iranian Conference on Electrical Engineering (ICEE)

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Abstract_we compare noise characteristics of Al 0.3 Ga 0.7 N /GaN/ Al 0.06 Ga 0.94 N/GaN DC-HEMT and Al 0.3 Ga 0.7 N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions. And also the noise curve versus drain voltage shows two regions. The first region is related to the triode region of the transistor where the noise decreases with increase of the drain voltage. The second region is related to the saturation region of the transistor where the noise is almost constant.

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“…[16]. From the circuit design point of view‚ the noise figure device scaling can be easily determined.…”

Section: B Noise Characteristicmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Compare noise characteristic of DC-HEMT and HEMT

Sadeghi

Vadizadeh

Faez

2013

2013 21st Iranian Conference on Electrical Engineering (ICEE)

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“…More recently Cappy and al. [7,8] studied the noise by employing quasi-unidimensional description. Furthermore Fukui dealt with the problem empirically and derived a simple but approximate formula [8].…”

Section: Theoretical Analysesmentioning

confidence: 99%

Noise Modeling Including Effect of propagation along the gate of a field-effect transistor

Balti¹,

Samet²,

Pasquet

et al. 2005

2005 12th IEEE International Conference on Electronics, Circuits and Systems

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“…A representative example of numerical, quasi-2D model is the MESFET model proposed in 1981 by Carnez, Cappy et al [26], based on the quasi-2D non-stationary model [25] and later extended to HEMT's [24]. Analytical noise models based on the two-region channel sults are in satisfactory agreement with experiments, some basic difficulties arise in characterizing the fluctuations of the 2DEG current [ 191. With drastic simplifications, the analytical approach ultimately leads to extremely compact expressions for the noise parameters, like the well-known Fukui formula for the minimum noise figure [41].…”

Section: Physics-based Noise Analysis Of Semiconductor Devicesmentioning

confidence: 99%

Physics-based electron device modelling and computer-aided MMIC design

Filicori

Ghione

Naldi

1992

IEEE Trans. Microwave Theory Techn.

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Abstract-The paper provides an overview on the state of the art and future trends in physics-based electron device modelling for the computer-aided design of monolithic microwave IC's. After a review of the main physics-based approaches to microwave modelling, special emphasis is placed on innovative developments relevant to circuit-oriented device performance assessment, such as efficient physics-based noise and parametric sensitivity analysis. The use of state-of-the-art physicsbased analytical or numerical models for circuit analysis is discussed, with particular attention to the role of intermediate behavioural models in linking multidimensional device simulators with circuit analysis tools. Finally, the model requirements for yield-driven MMIC design are discussed, with the aim of pointing out the advantages of physics-based statistical device modelling; the possible use of computationally efficient approaches based on device sensitivity analysis for yield optimization is also considered.

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Noise modeling in submicrometer-gate FET's

Cited by 50 publications

References 11 publications

Compare noise characteristic of DC-HEMT and HEMT

Compare noise characteristic of DC-HEMT and HEMT

Noise Modeling Including Effect of propagation along the gate of a field-effect transistor

Physics-based electron device modelling and computer-aided MMIC design

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