Non‐volatile information storage using a molecular element comprising a proton‐conducting polymeric layer (PCL) and a proton‐trapping layer (PTL) is presented (see figure). Application of a positive voltage (write operation) to the top ion‐blocking electrode (IBE) allows dissociation of neutral (n) molecules into anions (−) and protons (+), motion and trapping (storage) of protons in the PTL. A negative voltage (erase operation) moves back the trapped protons to the anions.

Molecular materials containing tungsten polyoxometalates as the active elements embedded into polymer matrices are investigated as candidates for electronic device applications. The transport properties of these materials are investigated varying the interelectrode spacing and the polyoxometalate concentration. The I–V characteristics of planar devices reveal a conductivity peak at room temperature conditions for intermolecular distances less than 3 nm and electrode distances less than 100 nm. The transport characteristics are discussed in terms of tunneling mechanisms.

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Polyoxometalates are a class of well-defined metal oxygen clusters mostly known for their catalytic properties. However, their electronic and optical properties have been used in device applications such as electrochromic displays, dopants for conductive polymers, gas and chemical sensors, capacitors, and electrochemical cells. We fabricate nanodevices based on a composite poly(methyl methacrylate) H3SiW12O40 system and we investigate the effects of electrode material, electrode distance, and molecular concentration on the electronic transport characteristics. It is found that in the case of electrode distances smaller than 50 nm, tunneling effects appear, which are discussed using tunneling theory models. These effects are primarily dependent on the electrode distance and molecular concentration, and less on the electrode material.

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A new aqueous base developable, chemically amplified negative resist based on epoxy chemistry is evaluated for high-resolution, high-speed e-beam lithography. This resist is formulated using partially hydrogenated poly(hydroxy styrene) and epoxy novolac polymers. Degree of hydrogenation controls the aqueous base solubility and microphase separation phenomena. Reduction of edge roughness compared to the pure epoxy systems is observed whereas the absence of swelling phenomena allows lithography up to 100 nm regime and a sensitivity of 4–8 μC/cm2 at 50 keV. The diffusion coefficient has been evaluated both from high-resolution line and dot exposures and it is found to be 5×10−14 cm2/s for the optimal thermal processing conditions selected.

The last decade has seen considerable experimental and theoretical work towards the use of germanium for high-speed low-power electronics. Despite the demonstration of high performance p-channel Ge transistors in planar and non-planar device technology, fabrication of n-channel Ge transistors faces a number of scientific and technological challenges, which hinder the development of CMOS logic circuits based entirely on Ge. Major challenge constitutes the control of fast n-type dopant (out-/in-)diffusion in Ge, which prevents the formation of ultra-shallow and highly activated n+/p junctions necessary for n-channel Ge MOSFET’s enhanced performance. The paper focuses on parameters affecting n-type dopant diffusion in Ge and the attempts to suppress it, with particular emphasis on the action of nitrogen as phosphorous diffusion blocker.