Molecular Storage Elements for Proton Memory Devices

Abstract

Non‐volatile information storage using a molecular element comprising a proton‐conducting polymeric layer (PCL) and a proton‐trapping layer (PTL) is presented (see figure). Application of a positive voltage (write operation) to the top ion‐blocking electrode (IBE) allows dissociation of neutral (n) molecules into anions (−) and protons (+), motion and trapping (storage) of protons in the PTL. A negative voltage (erase operation) moves back the trapped protons to the anions.

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

“…In addition, the number of traps can be varied with heating temperature, which is strongly correlated with the oxygen vacancy concentration in the film. Furthermore, we demonstrate optimized robust high performance fully solution processed inorganic oxide precursor based flash memory devices without tunneling and blocking layer, where the processing temperature does not exceed 200 • C. Our devices outperform other similar memory devices reported earlier [2][3][4][5][6][7].…”

“…It is a challenge to create intrinsic traps in the dielectric layer without high temperature processing steps [1]. While low temperature processed memory devices fabricated from polymers have been demonstrated as an alternative [2][3][4][5][6][7], their performance degrade rapidly after a few cycles of operation [8][9][10][11][12][13][14]. Moreover conventional memory devices need the support of tunneling and blocking layers since the memory dielectric or polymer is incapable of preventing memory leakage [15][16][17].…”

First principle investigation of transport properties of Lindqvist derivatives based molecular junction

“…POMs can also be characterized as zerodimension semiconductors [35]. To date the transport properties of this vast class of molecules have been extensively investigated in experiments designed around POM embedded in polymetric matrices or thin films [30,32,[35][36][37][38]. To the best of our knowledge however there is no investigation available of the electronic transport through POMs at the single molecular level, although this can certainly contribute to the understanding of the electron transfer process in such compounds.…”

“…Even though the main interest for these molecular systems is in the field of catalysis, many other potential applications such as electrochemical displays, chemical sensors, capacitors, memory, and electrochemical cells have all been proposed [30][31][32][33]. POMs have one important characteristic, namely that they can accept one or more electrons without undergoing significant structural changes.…”

Synthesis, properties, and electrical memory characteristics of new diblock copolymers of polystyrene-block-poly(styrene-pyrene)

“…Polymeric and organic bistable memory devices are promising candidates for highdensity data storage devices [1][2][3][4][5][6][7] because of their attractive features including simplicity in device structure, good scalability, low-cost potential, low-power operation, and three-dimensional stacking capability [8][9][10][11]. Electronic resistivetype memory devices using polymers as active elements are shown to efficiently store the data based on the high-and low-conductance response to an applied voltage.…”