Tunneling transport in polyoxometalate based composite materials

Γλέζος, Ν.; Argitis, Panagiotis; Velessiotis, D.; Diakoumakos, Constantinos D.

doi:10.1063/1.1594278

Cited by 49 publications

(39 citation statements)

References 15 publications

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“…In that case, a thick PMMA isolation layer has been interposed between the gate electrode and the HPW/PMMA layer in order to exclude any possibility of charging of the HPW/ PMMA layer from the Al gate electrode. [21] The measured capacitance variations with gate voltage and corresponding flat-band voltage shifts (see Fig. 2c and d) are similar to those reported in Figure 2a and b, respectively.…”

supporting

confidence: 79%

Molecular Storage Elements for Proton Memory Devices

et al. 2008

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Non‐volatile information storage using a molecular element comprising a proton‐conducting polymeric layer (PCL) and a proton‐trapping layer (PTL) is presented (see figure). Application of a positive voltage (write operation) to the top ion‐blocking electrode (IBE) allows dissociation of neutral (n) molecules into anions (−) and protons (+), motion and trapping (storage) of protons in the PTL. A negative voltage (erase operation) moves back the trapped protons to the anions.

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supporting

confidence: 79%

Molecular Storage Elements for Proton Memory Devices

et al. 2008

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“…Polyoxometalates (POMs) exhibit high electron mobilities and have conduction-band edges located at energies as low as -4 eV. [117][118][119][120][121] Additionally, their hydrophilic nature allows for its facile processing from water or alcohols which makes the processing compatible with solution processed light emitting materials. These characteristics make POMs appealing candidates for use as an EIL in HyLEDs.…”

Section: Molecular Interlayers For Enhanced Electron Injectionmentioning

confidence: 99%

Hybrid Organic–Inorganic Light‐Emitting Diodes

2011

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The demonstration of colour tunability and high efficiency has brought organic light-emitting diodes (OLEDs) into the displays and lighting market. However, high production costs due to expensive deposition techniques and the use of reactive materials still limit their market entry, highlighting the need for novel concepts. This has driven the research towards the integration of both organic and inorganic materials into devices that benefit from their respective peculiar properties. The most representative example of this tendency is the application of metal oxides in organic optoelectronics. Metal oxides combine properties such as high transparency, good electrical conductivities, tuneable morphology, and the possibility of deposition on large areas with low-cost techniques. The use of metal oxides as charge injection interfaces in OLEDs has also been investigated. Hybrid organic-inorganic light-emitting diodes (HyLEDs) are inverted OLEDs that employ air-stable metal oxides as the charge injection contacts. They are emerging as a potential competitor to standard OLEDs, thanks to their intrinsic air stable electrodes and solution processability, which could result in low-cost, large area, light-emitting devices. This article reviews the short history of this class of devices from its first solid state example published in 2006 to the present achievements. The data presented shed light on the electronic mechanism behind the functioning of HyLEDs and give guidelines for their further optimization.

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“…1). Together they form an insulating barrier of permittivity very close to that of SiO 2 [11]. The POMs are oriented parallel to the SiO 2 surfaces.…”

Section: Flash Cell Designmentioning

confidence: 99%

FDSOI molecular flash cell with reduced variability for low power flash applications

Georgiev

Amoroso

Vilà‐Nadal

et al. 2014

2014 44th European Solid State Device Research Conference (ESSDERC)

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Abstract-In this work we present a modeling study of a conceptual low power non-volatile memory cell based on inorganic molecular metal oxide clusters (polyoxometalates (POM)) as a storage media embedded in the gate dielectric of a Fully Depleted SOI (FD SOI) with reduced statistical variability. The simulations were carried out using a multi-physics simulation framework, which allows us to evaluate the variability in the programming window of the molecular based flash cell with an 18 nm gate length. We have focused our study on the threshold voltage variability influenced by random dopant fluctuations and random special fluctuations of the molecules in the floating gate of the flash-cell. Our simulation framework and conclusions can be applied not only to POM-based flash cell but also to flash cells based on alternative molecules used as a storage media.

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Tunneling transport in polyoxometalate based composite materials

Cited by 49 publications

References 15 publications

Molecular Storage Elements for Proton Memory Devices

Molecular Storage Elements for Proton Memory Devices

Hybrid Organic–Inorganic Light‐Emitting Diodes

FDSOI molecular flash cell with reduced variability for low power flash applications

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