Aqueous base development and acid diffusion length optimization in negative epoxy resist for electron beam lithography

Γλέζος, Ν.; Argitis, Panagiotis; Velessiotis, D.; Raptis, Ioannis; Hatzakis, M.; Hudek, P.; Kostic̆, I.

doi:10.1116/1.1324615

Cited by 10 publications

(8 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can also be used for photoresists as well. 29,30 In the cases examined, the concentration of the photoacid generator ͑PAG͒ was 2.5%, 5%, and 10%. Its molecule is shown in Fig.…”

Section: A Resist Materials and Experimental Conditions Used In The Smentioning

confidence: 96%

Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

Patsis

Γλέζος

Gogolides

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

Simulation of amine concentration dependence on line edge roughness after development in electron beam lithography J. Appl. Phys.Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation J.A molecular-based representation of a negative tone chemically amplified resist was developed and studied using stochastic simulations. The gel formation mechanism resulting from the reactiondiffusion phenomena in the polymer matrix during the postexposure bake step, as well as the surface and line-edge roughness formation were investigated in two dimensions. Graph theory computational techniques were employed to determine the gel cluster size and its relation to the fraction of the total number of chemically and physically cross-linked chains. Results of the simulation include the maximum acid diffusion range, the cross-link density, the surface and line edge roughness, versus exposure dose and photoacid generator concentration.

show abstract

“…It can also be used for photoresists as well. 29,30 In the cases examined, the concentration of the photoacid generator ͑PAG͒ was 2.5%, 5%, and 10%. Its molecule is shown in Fig.…”

Section: A Resist Materials and Experimental Conditions Used In The Smentioning

confidence: 96%

Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

Patsis

Γλέζος

Gogolides

2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

show abstract

“…͑11͒, is the elastic transport mean free path. 37 Taking into account the primary beam broadening, the distribution functions of primary and secondary electrons, f P ͑z , , E͒ and f S ͑z , , E͒, can be approximated by 12,13 …”

Section: B Elastic Scatteringmentioning

confidence: 99%

“…The impact on the resolution arises from the fact that backscattered electrons can emerge from the substrate at rather distant locations relative to the impact point of the primary electron. The probability that a backscattered electron emerges at a distance from the impact point is conventionally given by [12][13][14] …”

Section: Backscattering From the Substratementioning

confidence: 99%

See 1 more Smart Citation

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

Aktary¹,

Stepanova²,

Dew³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

We report a three-dimensional (3D) simulation model based on the kinetic transport theory for calculating the distribution of PMMA fragments after an exposure to electron impact. The conditions employed for the modeling were chosen to resemble a typical electron beam lithography exposure. The model accounts for inelastic collisions of electrons in PMMA and resulting random main-chain scissions. We have considered gratings composed of parallel lines distanced by 10–50nm and exposed to electrons with energies of 10–60keV. By the model simulations, we have generated and analyzed the detailed 3D distributions of small PMMA fragments (one to ten monomers) that are soluble at the development stage and thus are responsible for the clearance in the gratings. In terms of the spatial distributions of soluble fragments, we have formulated the criteria that define the total clearance as well as the local grating development and investigated their dependence on the grating period, electron dose, and energy.

show abstract

“…1 Even with continued advancements and extensions of optical lithography, electron beam lithography continues to play a critical supporting role in semiconductor manufacturing. 9 It is this modulation in dissolution rate that permits the formation of a relief image in these materials. 3 Also, it is extensively used in path-finding research and development of transistor structures beyond conventional metal-oxidesilicon field effect transistors ͑MOSFETs͒ such as quantum dots, 4 single electron transistors, 5 and carbon nanotubes.…”

Section: Introductionmentioning

confidence: 99%

Electron beam lithography process using radiation sensitive carboxylate metalorganic precursors

Jeyakumar

Henderson

Román³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

A bilayer process has been developed for electron beam lithography using radiation sensitive metalorganic precursors as imaging layers in conjunction with organic planarizing layers. Upon electron beam irradiation, the precursor is converted to a metal oxide which serves as an etch mask for subsequent pattern transfer through the planarizing layer. In this article, a titanium(n-butoxide) 2 (2-ethylhexanoate) 2 precursor was investigated that exhibits sensitivity and contrast of 495 C/cm 2 and 2.75, respectively, 10 keV accelerating potential. The sensitivity was further enhanced to 72 C/cm 2 using a pre-exposure thermal bake to partially convert the precursor to metal oxide prior to electron beam imaging. Additionally, it was found that combining the titanium(n-butoxide) 2 (2-ethylhexanoate) 2 precursor with a similar precursor containing a higher atomic number metal center, barium(2-ethylhexanoate) 2 in this work, also enhanced the sensitivity to 157 C/cm 2 for a 1:1 molar mixture of the precursors. After imaging and development, the patterns were completely converted to metal oxide by thermal baking to improve the etch resistance of the hard mask. This postdevelopment thermal conversion step was found to result in vertical shrinkage of the features and minimal lateral shrinkage. For bilayer processing, the titanium precursor was imaged on top of hard baked novolac and the pattern was transferred through the novolac using an O 2 reactive ion etch. Sub-100 nm patterning is demonstrated using both single layer and bilayer processes with these materials, with aspect ratios greater than five achieved with the bilayer process.

show abstract

Aqueous base development and acid diffusion length optimization in negative epoxy resist for electron beam lithography

Cited by 10 publications

References 12 publications

Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists

Simulation of the spatial distribution and molecular weight of polymethylmethacrylate fragments in electron beam lithography exposures

Electron beam lithography process using radiation sensitive carboxylate metalorganic precursors

Contact Info

Product

Resources

About