A comprehensive study of AuMn ohmic contact for p-type GaAs is presented using electrical testing, scanning electron microscopy, Auger electron spectroscopy, and secondary ion-mass spectroscopy. The contact fabrication-Mn proportion against Au, alloying cycle-was optimized taking into account the results of the electrical tests. Contact resistivity values are presented for different doping levels. Unalloyed AuMn contact was found to give a good contact resistivity on samples with an ultrahigh doping level of2 X 1
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