Design and evaluation of a planar GaAlAs-GaAs bipolar transistor

Ankri, D.; Scavennec, A.

doi:10.1049/el:19800032

Cited by 15 publications

(2 citation statements)

References 3 publications

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“…The HBT was analysed by Kroemer (1957) but suffered from the usual technological bottleneck until 1982 when Kroemer considered that his original conception was then an 'idea whose time has come' (Kroemer 1982). A considerable number of papers have appeared reporting results on the HBT, principally using the GaAlAs/GaAs heterostructure (Konagai and Takahashi 1975, Ross et al 1979, Ankri and Scavennec 1980, Beneking and Su 1981.…”

Section: The Heterojunction Bipolar Transistormentioning

confidence: 99%

New unorthodox semiconductor devices

Board

1985

Rep. Prog. Phys.

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A distinctive feature in the development of solid-state electronic devices has been the long time interval that has usually elapsed between the initial conception of the device, and its experimental realisation. The technology bottleneck which gives rise to this phenomenon has recently been significantly widened by the emergence of several new technologies which are enabling the realisation of device structures which, although not entirely new in concept, are receiving a revived interest because they are now technologically feasible.In this article we discuss a range of new device structures, many of which fall into the above category, and the ways in which new advances in technology have made them realistic contenders for many device applications. In addition a number of structures which rely upon entirely new phenomena are presented, with experimental demonstration considerably enhanced, and in some cases only made possible by the emergence of ion-implantation and molecular beam epitaxy.

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Section: The Heterojunction Bipolar Transistormentioning

confidence: 99%

New unorthodox semiconductor devices

Board

1985

Rep. Prog. Phys.

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“…The techniques needed to fabricate good heterostructure devices are now becoming available; using MBE or MOCVD the material and its doping can be changed in a very short distance (Wood et al 1980). The devices of interest in the microwave field at the moment use the (GaA1)As system, the base region being GaAs (Marty et a1 1979, Bailbe et a1 1980, Ankri and Scavennec 1980, Beneking and Su 1982. It will not be long before genuine microwave transistors are available for evaluation.…”

Section: Heterostructure Bipolar Transistorsmentioning

confidence: 99%

Microwave semiconductors devices

Sitch

1985

Rep. Prog. Phys.

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The field of microwave semiconductor devices has expanded greatly in recent years, both in tHe functions that may be performed and the range of devices available for any function. Detector and mixer diodes have been available for many years, but the period of rapid growth began with the introduction of two terminal negative differential resistance diodes in the late 1950s and 1960s. The upper frequency limits of transistor operation have also marched steadily upwards, with millimetre-wave (above 30 GHz) operation being achieved in many laboratories before 1980.The stringent demands of microwave applications have made the field of microwave semiconductors a forcing house for the industry. Microwave requirements lead to fine geometries, accurately controlled doping and the use of different materials to perform different functions, sometimes within the same device. On the other hand, microwave monolithic integrated circuits are not very complex or, as yet, highly developed, most microwave integrated circuits'being of hybrid construction (discrete devices mounted in a passive circuit).The highest operating frequencies are achieved by the simplest devices ; mixer and detector diodes can work at over 1 THz, negative resistance diodes at a few hundred GHz, while transistors are limited to under 100 GHz at present. Future developments will exploit the properties of heterostructures in which different parts of the device are made from different semiconductor materials.The aim of this review is to provide an introduction for those new to microwave semiconductors and an update for those who have not been closely involved for some time. Following the introduction is a section on carrier transport, which is a topic of great importance in the understanding of device operation. The individual families of devices are discussed in the succeeding sections, starting with varistor and varactor diodes in which the variation of resistance or reactance is the important feature. The next section introduces transit-time phenomena and the devices designed to take advantage of them. Transit-time semiconductor devices are not widely used outside the microwave bands whereas transistors, the subjects of the next two sections, are used in virtually every electronic assembly. The appendix serves to briefly describe fabrication technology, which has a great influence on the performance and cost of microwave semiconductor devices.

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Heterostructure Bipolar Transistors

Požela

1993

Physics of High-Speed Transistors

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Design and evaluation of a planar GaAlAs-GaAs bipolar transistor

Cited by 15 publications

References 3 publications

New unorthodox semiconductor devices

New unorthodox semiconductor devices

Microwave semiconductors devices

Heterostructure Bipolar Transistors

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