MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor

Azoulay, R.; Dugrand, L.; Ankri, D.; Rao, E. V. K.

doi:10.1016/0022-0248(84)90449-4

Cited by 30 publications

(5 citation statements)

References 11 publications

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“…3 lies between 0.25 to 0.33 below 1 Â 10 19 cm À3 and 0.36 to 0.72 above 1 Â 10 19 cm À3 . The rather high overall compensation ratios agree with that reported by Tang et al [7] and are in contrast with other reports where the compensation ratio is found to be very low [14] or assumed to be zero [21,22]. This demonstrates that at a higher silicon concentration more Si atoms are incorporated as acceptor states.…”

Section: Resultssupporting

confidence: 85%

Very High Silicon Concentration by MOVPE in GaAs

Béji

Chine

Jani

et al. 1998

phys. stat. sol. (a)

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Section: Resultssupporting

confidence: 85%

Very High Silicon Concentration by MOVPE in GaAs

Béji

Chine

Jani

et al. 1998

phys. stat. sol. (a)

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“…Typical MOVPE sources are silicon hydrides diluted in a high-pressure gas mixture. Silicon incorporation into GaAs and AlGaAs is proportional to the input silane partial pressure and no significant memory effect is observed [219,223]. The decomposition of silane is a thermally activated process [218].…”

Section: Siliconmentioning

confidence: 99%

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Biefeld

Koleske

Cederberg

2015

Handbook of Crystal Growth

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“…The n-type doping in GaAs can be obtained by using Si [15,16], S [17,18], Ge [19], Sn [20], Se [21], or Te [22] as doping sources. Among these doping sources Si is commonly used as an intentional n-type dopant in GaAs and related compounds.…”

Section: Introductionmentioning

confidence: 99%

“…Because of the differences in electrical and optical properties of Si-doped GaAs from S, Te, Sn, Ge, Se-doped GaAs grown by metalorganic vapor phase epitaxy (MOVPE), these properties were studied extensively by several authors in recent years [17][18][19][20][21][22]. However, significant variation of the growth parameters was needed to obtain the incorporation of controlled amount of impurities in MOVPE growth process.…”

Section: Introductionmentioning

confidence: 99%

Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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Silane (SiH 4 ) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH 3 ) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH 4 mole fraction, growth temperature, TMGa and AsH 3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SiH 4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH 3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10 17 −1.). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL,. We also obtained an empirical relation for the band gap shrinkage, DE g in Si-doped GaAs as a function of electron concentration. The value of DE g (eV) = −2.75×10 − 8 n 1/3 , indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH 3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model.

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MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor

Cited by 30 publications

References 11 publications

Very High Silicon Concentration by MOVPE in GaAs

Very High Silicon Concentration by MOVPE in GaAs

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

Si incorporation and Burstein–Moss shift in n-type GaAs

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