Very High Silicon Concentration by MOVPE in GaAs

Béji, Lotfi; Chine, Z.; Jani, B. El; Oueslati, M.

doi:10.1002/(sici)1521-396x(199808)168:2<453::aid-pssa453>3.0.co;2-j

Cited by 5 publications

(4 citation statements)

References 30 publications

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“…This demonstrates that silicon incorporated in the layers was no longer electrically active as donor and samples become compensated in the high Si doping region. This is due to higher incorporation of Si atoms as acceptors states and to the formation of precipitates of Si [26]. The solid line in Fig.…”

Section: Methodsmentioning

confidence: 92%

“…We have reported that the electron concentration varies approximately linearly with the SiH 4 partial pressure, reaching a maximum of about 1 Â 10 19 cm --3 , and then decreases as the partial pressure of SiH 4 increases. However, n Si continues to increase with the SiH 4 partial pressure [26]. This demonstrates that silicon incorporated in the layers was no longer electrically active as donor and samples become compensated in the high Si doping region.…”

Section: Methodsmentioning

confidence: 99%

“…The n-type doping gas used is SiH 4 500 ppm diluted in H 2 . We have reported in a previous study that SiH 4 gives an electron concentration up to 10 19 cm --3 [25,26]. For the p-type GaAs layer growth, liquid carbon tetrachloride (CCl 4 ) is used as dopant source to achieve hole concentrations up to 10 20 cm --3 [24].…”

Section: Methodsmentioning

confidence: 99%

“…Carbon does not cause the problem of memory effect and doping levels exceeding 10 20 cm --3 have been achieved [24]. Silicon has been demonstrated that it works well as n-type dopant in GaAs [25,26] (a doping level exceeding 10 19 cm --3 has been achieved).…”

Section: Introductionmentioning

confidence: 96%

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High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

Béji

Jani

Gibart

2001

phys. stat. sol. (a)

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We report the growth of a p + -n + -GaAs tunnel diode by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p-type and n-type dopants, respectively. The more efficient incorporation of silicon on donor sites and carbon on acceptor sites, results in a tunnel junction with peak current density up to 50 Acm --2 , and peak-to-valley current ratio up to 20 at room temperature. This represents the best result ever reported for a GaAs tunnel diode by MOVPE. The calculated theoretical peak current density agrees substantially with our experimental and reported results.

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Section: Methodsmentioning

confidence: 92%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

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High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

Béji

Jani

Gibart

2001

phys. stat. sol. (a)

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Stress and density of defects in Si‐doped GaN

Chine

Rebey

Touati

et al. 2006

Physica Status Solidi (a)

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We report a study by photoluminescence (PL), Raman scattering, and highly resolved X‐ray diffraction (HRXRD) of a series of Si‐doped n‐type GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire (0001) with the carrier concentration of 2.3 × 1017 – 9 × 1018 cm–3. We found that the band gap reduction deduced from the PL spectra analysis is due to both band gap narrowing (BGN) effect and change of the nature of stress in the GaN:Si layers. The HRXRD spectra show that at high Si‐doping levels (>1.6 × 1018 cm–3) the GaN films become under tensile stress. Progressive decreases of the E2 Raman mode frequency with Si concentration confirm this observation. The stress induced E2 mode frequency shift is estimated to 1.6 cm–1/GPa. Additionally, dislocation densities are determined by HRXRD by employing a model that uses the line width of X‐ray rocking curves. Atomic force microscopy (AFM) is also used to investigate the defect surface structures of GaN:Si layers which are dominated by pinned steps and surface depressions related to threading dislocations. We find that dislocation densities given by AFM measurements are in agreement with those obtained from rocking curve line widths. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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