Electrochemical characteristics of the n+-type GaAs substrate in HCl electrolyte and the morphology of the obtained structure

Mazouz, Zouhour; Béji, Lotfi; Meddeb, J.; Ouada, H. Ben

doi:10.1016/j.arabjc.2010.07.011

Arabian Journal of Chemistry

2011

DOI: 10.1016/j.arabjc.2010.07.011

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Electrochemical characteristics of the n+-type GaAs substrate in HCl electrolyte and the morphology of the obtained structure

Zouhour Mazouz

Lotfi Béji

J. Meddeb³

et al.

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Cited by 4 publications

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Controlled electrochemical growth of micro-scaled As2O3 and Ga2O3 oxide structures on p-type gallium arsenide

Acikgoz

Yungevis

2022

Appl. Phys. A

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Electrochemical characteristics of the n+-type GaAs substrate in HCl electrolyte and the morphology of the obtained structure

Cited by 4 publications

References 21 publications

Controlled electrochemical growth of micro-scaled As2O3 and Ga2O3 oxide structures on p-type gallium arsenide

Controlled electrochemical growth of micro-scaled As2O3 and Ga2O3 oxide structures on p-type gallium arsenide

Structural and optical properties of electrochemically etched p+-type GaAs surfaces: influence of HF presence in the etching electrolyte

The rational design of a graphitic carbon nitride-based dual S-scheme heterojunction with energy storage ability as a day/night photocatalyst for formic acid dehydrogenation

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