Structural and optical properties of electrochemically etched p+-type GaAs surfaces: influence of HF presence in the etching electrolyte

Naddaf, M.

doi:10.1007/s10854-017-7597-8

Cited by 3 publications

(2 citation statements)

References 22 publications

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“…In the samples with higher deposition times, that signal was shifted towards lower BE, to the typical value of fluorides at BE = 684.0 ÷ 685.0 eV. It is well known 15 that the surface cleaning of GaAs substrate with HF leads to the formation of GaF, GaF 3 and As 2 O 3 in the outmost layer of GaAs, but our results excluded the presence of Ga fluorides on GaAs reference sample before BaF 2 deposition (Table 1). Furthermore, volatile compounds of Ga fluorides can be formed as a consequence of the reaction between BaF 2 vapour and GaAs substrate, as described in Stumborg et al 16 This effect was observed in the initial stage of BaF 2 deposition (samples BF2 and BF3), where a low intensity peak of GaF 3 at BE = 684.9 eV was observed 17 .…”

Section: Resultsmentioning

confidence: 80%

Work function and negative electron affinity of ultrathin barium fluoride films

Mezzi

Bolli

Kačiulis

et al. 2020

Surface & Interface Analysis

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Thin films of barium fluorides with different thicknesses were deposited on GaAs substrate by electron beam evaporation. The aim of the work was to identify the best growth conditions for the production of coatings with a low work function suitable for the anode of hybrid thermionic‐photovoltaic (TIPV) devices. The chemical composition and work function φ of the films with different thicknesses were investigated by X‐ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The lowest value of φ = 2.1 eV was obtained for the film with a thickness of ~2 nm. In the valence band spectra of the films at low kinetic energy, near the cutoff, a characteristic peak of negative electron affinity was present. This effect contributed to a further reduction of the film's work function.

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Section: Resultsmentioning

confidence: 80%

Work function and negative electron affinity of ultrathin barium fluoride films

Mezzi

Bolli

Kačiulis

et al. 2020

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…The peak position of the heavily doped GaAs substrate (p ¼ 2 Â 10 18 cm À3 ) is higher than that of the undoped GaAs (1.424 eV) due to band lling effect. 22 Visible PL emissions from porous GaAs were previously observed by many authors and assigned to arsenic and gallium oxides micro-crystals 23 or to quantum connement effect in GaAs nanocrystallites. 24 As we have removed oxides from the porous GaAs surface, we ascribed the visible PL to a quantum size effect in GaAs nanocrystallites.…”

Section: Resultsmentioning

confidence: 95%