2019
DOI: 10.1039/c9ra04539b
|View full text |Cite
|
Sign up to set email alerts
|

Comparative study of aqueous solution processed ZnO/GaAs and ZnO/porous GaAs films

Abstract: In this paper, we investigate the structural and photoluminescence properties of aqueous solution-processed ZnO/GaAs and ZnO/porous GaAs films.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(1 citation statement)
references
References 49 publications
0
1
0
Order By: Relevance
“…The emission lines located at 440 and 451 nm are due to the electron transfer between various zinc interstitial levels and the VB [38]. In addition, the peak located at 467 nm belongs to the transition between the CB and oxygen antisite (O Zn ) [39]. Due to the existence of several surface defects in ZnO, the blue-green emission line is noticed at 482 nm [40].…”
Section: Resultsmentioning
confidence: 99%
“…The emission lines located at 440 and 451 nm are due to the electron transfer between various zinc interstitial levels and the VB [38]. In addition, the peak located at 467 nm belongs to the transition between the CB and oxygen antisite (O Zn ) [39]. Due to the existence of several surface defects in ZnO, the blue-green emission line is noticed at 482 nm [40].…”
Section: Resultsmentioning
confidence: 99%