Formation of superhydrophobic porous GaAs layer: effect of substrate doping type

Naddaf, M.

doi:10.1007/s12034-021-02639-4

Cited by 3 publications

(4 citation statements)

References 32 publications

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“…The Raman spectroscopy produced the results shown in Figure 6 for some of the samples. The literature shows two strong peaks for undoped GaAs: one at 292 cm −1 , assigned as an LO phonon, and another at 268 cm −1 , assigned as a TO phonon [ 37 ]. Additionally, weak responses can be distinguished in the region between 130 and 250 cm −1 , corresponding to acoustic phonons [ 38 ], and two small peaks between 500 and 550 cm −1 , called 2TO [ 39 ].…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, two contributions can be distinguished between the TO and LO phonons, which have been identified as surface-localized SO phonons [ 41 ] and the IFCM peak (Intermediate Frequency Coupled Mode) [ 42 ]. Nadaff [ 37 ] assigns a contribution given by As Vacancy at 250 cm −1 . There is also a broad band region between 330 cm −1 and 500 cm −1 , referred to in the literature as L+, which corresponds to transitions that involve the plasmon generated in the photon–electron interaction.…”

Section: Resultsmentioning

confidence: 99%

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Formation of Point Defects Due to Aging under Natural Conditions of Doped GaAs

Zambrano-Rojas,

Fonthal,

Escorcia-Salas

et al. 2024

Materials

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The aging dynamics of materials used to build the active part of optoelectronic devices is a topic of current interest. We studied epitaxial samples of GaAs doped with Ge and Sn up to 1×1019 cm−3, which were stored in a dry and dark environment for 26 years. Photoluminescence spectra were taken in three periods: 1995, 2001 and 2021. In the last year, time-resolved photoluminescence, Raman, and X-ray measurements were also performed to study the evolution of defects formed by the action of O2 in the samples and its correlation with the doping with Ge and Sn impurities. We found that oxygen formed oxides that gave off Ga and As atoms, leaving vacancies mainly of As. These vacancies formed complexes with the dopant impurities. The concentration of vacancies over the 26 years could be as large as 1×1018 cm−3.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Formation of Point Defects Due to Aging under Natural Conditions of Doped GaAs

Zambrano-Rojas,

Fonthal,

Escorcia-Salas

et al. 2024

Materials

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“…The anodization and electroplating of metals on the bulk or porous semiconductor layers have a great impact upon the wetting properties of surfaces leading to pronounced hydrophilic or hydrophobic behavior. Recently, there were explored the wetting properties of GaAs crystals subjected to the electrochemical etching for different durations of anodization, [ 65 ] which disclosed a contact angle (CA) around 140° and 158° in p ‐type and n ‐type GaAs, respectively, at 60 min of anodization. It should be noted that the morphologies of the two samples look totally different, demonstrating grooved surfaces and nanowires on the samples with different doping types.…”

Section: Hydrophilic and Hydrophobic Properties Tailored By Electroch...mentioning

confidence: 99%

Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications

Monaico

Ursaki

et al. 2023

Physica Rapid Research Ltrs

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Porous semiconductor compounds represent a class of materials which is under an intense research focus over the last years. Herein, morphologies and topologies produced by anodization in binary semiconductor compounds having various bandgaps and crystallographic orientations are demonstrated with a focus on technological procedures applied for generating arrays of pores with a controlled design. The mechanism of pores growth under the photoresist masks is discussed and the connection between the design of the mask and the architecture of the produced porous structure is disclosed. The evolution of physical characteristics of the materials such as luminescence, optical, photonic, vibrational, hydrophilic, and hydrophobic properties as a result of anodization is investigated. Investigations are performed by means of scanning electron microscopy, photoluminescence and cathodoluminescence spectroscopy, and contact angle measurements. Some possible practical applications of the proposed technological approaches and the produced porous structures are briefly discussed.

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“…37,38 It is also important to take into account the semiconductor characteristics, namely the conductivity type, surface orientation, type and concentration of the dopant, etc. 39,40 In this study, we analyzed the influence of the electrolyte composition on the surface morphology of the gallium arsenide during the electrochemical etching in the acid solutions. This is not the first study of this type.…”

Section: Introductionmentioning

confidence: 99%