Articles you may be interested inHigh-aspect-ratio inductively coupled plasma etching of InP using SiH 4 / Cl 2 : Avoiding the effect of electrode coverplate material
We present here examples of applications of SEAM for the characterization of 111-V compound semiconductors and the visualisation of defects in devices. The electron acoustic signal can be quantitatively correlated to the total incorporation of impurities in electrically active or nonactive sites. Both act to reduce the lattice thermal conductivity and can be correlated to the appearance of complexes giving rise to deep-level emission in cathodoluminescence. Introduction of impurities and lattice defects by ion implantation induces a reduction in thermal conductivity. The recovery of lattice disorder by thermal annealing can be estimated from the SEAM signal evolution. In devices, SEAM is a unique nondestructive method to visualise, with submicron spatial resolution, interface compound formation between an ohmic contact and the semiconductor or zones of nonadherence of a metallic overlayer to a semiconductor.
A comprehensive study of AuMn ohmic contact for p-type GaAs is presented using electrical testing, scanning electron microscopy, Auger electron spectroscopy, and secondary ion-mass spectroscopy. The contact fabrication-Mn proportion against Au, alloying cycle-was optimized taking into account the results of the electrical tests. Contact resistivity values are presented for different doping levels. Unalloyed AuMn contact was found to give a good contact resistivity on samples with an ultrahigh doping level of2 X 1
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