Comprehensive study of AuMn <i>p</i>-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

Dubon‐Chevallier, C.; Gauneau, M.; Bresse, J. F.; Izraël, A.; Ankri, D.

doi:10.1063/1.336766

Cited by 34 publications

(7 citation statements)

References 5 publications

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“…On an epitaxial layer with an equivalent doping level ~m -~) , the resistivity was as low as 2 X 0.cm2 [13]. In the case of the implanted layers, the contact resistivity was slightly higher, as expected (due to the compensation of an ntype epitaxial layer by the p-type implantation which affects the quality of the contact, and also possibly to the fact that HBT multilayer structures were used).…”

Section: Ohmic Contact On the Implanted Regionmentioning

confidence: 66%

High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors

Daoud‐Ketata¹,

Dubon‐Chevallier²,

Besombes³

1987

IEEE Electron Device Lett.

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Rapid thermal annealing (RTA) of Mg-implanted GaAs/ GaAlAs to contact the base layer of heterojunction bipolar transistors (HBT's) is reported. Annealing cycles with time durations of a few seconds and temperature in the range of 850-950°C have been tested. Electrical properties of the annealed samples have been investigated using an electrochemical measurement technique. It was found that hole concentrations as high as 4 x 1019 and electrical activities up io 70 percent can be obtained when high doses of Mg are implanted. This high doping level is very important since the final objective is to realize a contact region to the P-type base layer of HBT's through a highly doped n+ GaAs contact layer.

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Section: Ohmic Contact On the Implanted Regionmentioning

confidence: 66%

High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors

Daoud‐Ketata¹,

Dubon‐Chevallier²,

Besombes³

1987

IEEE Electron Device Lett.

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“…The formation of the Pd x InGaAs phase is always linked to the low resistance of the Pd-based contact to both the n þ -and p þ -InGaAs, and this phase is stable up to 350 C in our work and other studies. 22 The slight increase in q c in the p-type case might be due to redistribution 45,46 of the high concentration of Be dopants 47 from the very thin epilayer to the contact, although its cause is not clear.…”

Section: -5mentioning

confidence: 94%

Characterization of low-resistance ohmic contacts to n- and p-type InGaAs

Lin

Mohney

2013

Journal of Applied Physics

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Multilayer ohmic contacts with differing first metal layers (M = Mo, Pd, Pt) beneath a Ti/Pt diffusion barrier and Au cap were fabricated on n+ and p+-InGaAs, and the relationship between their specific contact resistance and interfacial chemistry was examined. Palladium-based contacts offered the lowest specific contact resistances of ρc=3.2×10−8 and 1.9×10−8 Ω-cm2 to n+- and p+-InGaAs, respectively. The low resistances of the Pd-based contact were correlated with the formation of a uniform PdxInGaAs phase in direct contact with InGaAs, as observed using transmission electron microscopy and energy dispersive spectroscopy. On the other hand, the Mo-based contact to n+ and p+-InGaAs had much higher specific contact resistances, even though its specific contact resistance on lightly doped n-InGaAs was nearly the same as that of the Pd-based contact. The cause of this discrepancy was identified to be the native oxide layer that remained between the contact and semiconductor in the Mo-based contacts, as revealed using transmission electron microscopy, energy dispersive spectroscopy, and electron energy loss spectroscopy. The effect of the native oxide in series with the Schottky barrier is significant only when the contact is doped heavily enough that tunneling of carriers through the Schottky barrier introduces a very low resistance.

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“…Conventional p-type alloyed contacts have been reported using Au/Zn (3), Au/Zn/Au (4)(5), Au/Mn (6), and Au/Mg (7), with a minimum value of the specific contact resistivity, pc, of 2 • 10 .7 fi-cm 2 being reported for Au/Mn. Conventional p-type alloyed contacts have been reported using Au/Zn (3), Au/Zn/Au (4)(5), Au/Mn (6), and Au/Mg (7), with a minimum value of the specific contact resistivity, pc, of 2 • 10 .7 fi-cm 2 being reported for Au/Mn.…”

mentioning

confidence: 99%

“…The achievement of a low resistance contact requires the presence of a highly doped semiconductor interfacial layer between the semiconductor and the metal. Conventional p-type alloyed contacts have been reported using Au/Zn (3), Au/Zn/Au (4-5), Au/Mn (6), and Au/Mg (7), with a minimum value of the specific contact resistivity, pc, of 2 • 10 .7 fi-cm 2 being reported for Au/Mn. Zinc diffusion from a spin-on Zn source prior to Au/Zn metallization has not yielded better results (8).…”

mentioning

confidence: 99%

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

Bulman¹,

Gwilliam²,

Chambers³

1989

J. Electrochem. Soc.

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Ti/Pt/Au ohmic contacts to p-type GaAs/AI=Gal_xAs heterostructures have been studied as a function of surface dopant concentrations between 6 • 10 TM cm -3 and 8.5 • 10 TM cm -3. The specific contact resistivities as determined from contact resistance measurements employing the transmission line method (TLM) on as-grown molecular beam epitaxially grown structures were at or above 1 • 10 .8 ~-cm 2. Three different conventional TLM metallization patterns were employed in the measurements as well as circular geometry TLM patterns. Open-tube Zn diffusion was employed to increase the surface dopant concentration to 8.5 • 10 TM cm ~ and produced specific contact resistivities as low as 2.5 • 10 .7 ~-cm 2. These values are found to be unchanged after 8000h and remain unaffected by 400~ 2 rain duration anneals.

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Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

Cited by 34 publications

References 5 publications

High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors

High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors

Characterization of low-resistance ohmic contacts to n- and p-type InGaAs

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

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