Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

Etrillard, J.; Ossart, P.; Patriarche, G.; Juhel, M.; Bresse, J. F.; Daguet, C.

doi:10.1116/1.580695

Cited by 52 publications

(24 citation statements)

References 5 publications

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“…Introducing SiCl 4 into the plasma offers more lateral etching due to its low anisotropy at low ion density [11]. This changes the profile from tapered to vertical.…”

Section: Resultsmentioning

confidence: 99%

“…High verticality and high aspect ratio have been demonstrated in a variety of chemistries including those based on CH 4 /H 2 [7], Cl 2 [4], [5], [8], BCl 3 [9], [10], SiCl 4 [11], and HBr [6]. However, we are not aware of any demonstration of sub-20 nm features with vertical sidewalls fabricated by RIE in In-based heterostructures.…”

Section: Introductionmentioning

confidence: 99%

“…We choose chlorinebased gases over CH 4 /H 2 or HBr based chemistries to avoid hydrogen passivation of near-surface dopants and extensive hydrocarbon polymer contamination to the chamber [7], [10]. We combine for the first time directional BCl 3 /Ar plasma [10] with lowanisotropy SiCl 4 chemistry [11] to obtain a vertical etching profile. We demonstrate sub-20 nm diameter nanowires with vertical sidewalls and an aspect ratio greater than 10.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Zhao

Alamo

2014

IEEE Electron Device Lett.

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“…Introducing SiCl 4 into the plasma offers more lateral etching due to its low anisotropy at low ion density [11]. This changes the profile from tapered to vertical.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Zhao

Alamo

2014

IEEE Electron Device Lett.

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“…There are many physical and chemical processes involved in the plasma etching. A general conclusion attributes the main plasma damage to the high energy ions via physical bombardment and the reactive ions via chemical reactions [7,[9][10][11][12]. The use of a low RF chuck power in ICP will reduce the ion energy; and the use of a chlorine-based gas will eliminate the harmful chemical reactions present in the hydrogen-based gas.…”

Section: Introductionmentioning

confidence: 99%

Advanced inductively coupled plasma etching processes for fabrication of resonator-quantum well infrared photodetector

Sun

Choi

Jhabvala

et al. 2015

Infrared Physics & Technology

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Jhabvala, C. A.; Waczynski, A.; and Olver, K., "Advanced inductively coupled plasma etching processes for fabrication of resonator-quantum well infrared photodetector" (2015). t r a c tResonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). To achieve the expected performance, the detector geometry must be produced in precise specification. In particular, the height of the diffractive elements (DE) and the thickness of the active resonator must be uniformly and accurately realized to within 0.05 lm accuracy and the substrates of the detectors have to be removed totally. To achieve these specifications, two optimized inductively coupled plasma (ICP) etching processes are developed. Using these etching techniques, we have fabricated a number of R-QWIP test detectors and FPAs with the required dimensions and completely removed the substrates of the test detectors and FPAs. Their QE spectra were tested to be in close agreement with the theoretical predictions. The operability and spectral non-uniformity of the FPA is about 99.57% and 3% respectively.Published by Elsevier B.V.

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“…The He and both SiH 4 and NH 3 were introduced through the top and bottom gas rings, respectively. A Plasma-Therm VLR system was used for ICP SiN x deposition.…”

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confidence: 99%

Electrical Effects in GaAs and AlGaAs during Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition of SiN[sub x] Films

Hahn

Lee

Mackenzie

et al. 1999

Electrochem. Solid-State Lett.

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The effects of deposition conditions on electrical properties of epitaxial GaAs and AlGaAs during inductively coupled plasma chemical vapor deposition of SiN x films are reported. The carrier concentration in the films was strongly affected by ion flux, ion energy, and deposition temperature. It was found that moderate to low source and radio-frequency chuck powers are preferable for SiN x film deposition on GaAs and AlGaAs. Two effects contributing to carrier reduction were identified: deep level trap introduction by energetic ion bombardment, and hydrogen passivation of dopants from the SiH 4 precursor.

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Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

Abstract: Articles you may be interested inHigh-aspect-ratio inductively coupled plasma etching of InP using SiH 4 / Cl 2 : Avoiding the effect of electrode coverplate material

Cited by 52 publications

References 5 publications

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Advanced inductively coupled plasma etching processes for fabrication of resonator-quantum well infrared photodetector

Electrical Effects in GaAs and AlGaAs during Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition of SiN[sub x] Films

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