The effects of deposition conditions on electrical properties of epitaxial GaAs and AlGaAs during inductively coupled plasma chemical vapor deposition of SiN x films are reported. The carrier concentration in the films was strongly affected by ion flux, ion energy, and deposition temperature. It was found that moderate to low source and radio-frequency chuck powers are preferable for SiN x film deposition on GaAs and AlGaAs. Two effects contributing to carrier reduction were identified: deep level trap introduction by energetic ion bombardment, and hydrogen passivation of dopants from the SiH 4 precursor.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.