905 nm Wavelength Laser as a Means for In Situ End-point Detection of Dry Etching of Al[sub x]Ga[sub 1−x]As on GaAs

technology of materials, lasers, semiconductors, superconductors technology of materials, lasers, semiconductors, superconductors V 1500 08 -274 905 nm Wavelength Laser as a Means for in situ End-Point Detection of Dry Etching of AlxGa 1−x As on GaAs. -A new 905 nm infrared laser source is developed for in situ end-point detection of etching of AlxGa 1−x As over GaAs. Light from a conventional 670 nm laser is strongly absorbed in both GaAs and AlxGa 1−x As materials and no interference is detected. Light from a 905 nm laser exhibits some interference with AlxGa 1−x As and no interference with GaAs due to absorption. This will produce a noticeable difference of signal patterns for etching of the two materials. -(LEE, J. W.; WESTERMAN, R.; MACKENZIE, K. D.; DONOHUE, J. F.; JOHNSON, D.; SASSERATH, J. N.; LIDDANE, K.; PEARTON, S. J.; Electrochem. Solid-State Lett. 2 (1999) 12, 640-641; Plasma-Therm, Incorp., St. Petersburg, FL 33716, USA; EN)

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ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of Al_xGa_1‐xAs on GaAs.

Lee

Westerman

Mackenzie

et al. 2000

ChemInform

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Orlikovskii

Руденко

2001

Russian Microelectronics

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Utilization of Optical Emission Spectroscopy for End-Point Detection during AlGaAs/GaAs and InGaP/GaAs Etching in BCl[sub 3]/N[sub 2] Inductively Coupled Plasmas

Lee

Jeon

Cho

et al. 2001

J. Electrochem. Soc.

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We developed optical emission spectroscopy based end-point detection techniques for GaAs-based etching in inductively coupled BCl 3 /N 2 plasmas. It was found that an emission peak of Ga ͑417 nm͒ was quite useful as a tracer for in situ process monitoring during both AlGaAs/GaAs and InGaP/GaAs multilayer etching. The intensity of the Ga emission peak increased significantly during AlGaAs/GaAs etching in a BCl 3 /N 2 inductively coupled plasma when the GaAs layer was exposed to the plasma. We found the same result with InGaP/GaAs etching. Utilization of the Ga peak signal is very important during the plasma process for GaAs-based device fabrication, especially for high electron mobility transistors and heterojunction bipolar transistors in order to minimize overetch time during the nonselective etching. The technique provides a breakthrough for in situ end-point detection of GaAs-based nonselective plasma etching.

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905 nm Wavelength Laser as a Means for In Situ End-point Detection of Dry Etching of Al[sub x]Ga[sub 1−x]As on GaAs

Cited by 3 publications

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ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of Al_xGa_1‐xAs on GaAs.

ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of Al_xGa_1‐xAs on GaAs.

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Utilization of Optical Emission Spectroscopy for End-Point Detection during AlGaAs/GaAs and InGaP/GaAs Etching in BCl[sub 3]/N[sub 2] Inductively Coupled Plasmas

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905 nm Wavelength Laser as a Means for In Situ End-point Detection of Dry Etching of Al[sub x]Ga[sub 1−x]As on GaAs

Cited by 3 publications

References 0 publications

ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of AlxGa1‐xAs on GaAs.

ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of AlxGa1‐xAs on GaAs.

Untitled

Utilization of Optical Emission Spectroscopy for End-Point Detection during AlGaAs/GaAs and InGaP/GaAs Etching in BCl[sub 3]/N[sub 2] Inductively Coupled Plasmas

Contact Info

Product

Resources

About

ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of Al_xGa_1‐xAs on GaAs.

ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of Al_xGa_1‐xAs on GaAs.