technology of materials, lasers, semiconductors, superconductors technology of materials, lasers, semiconductors, superconductors V 1500 08 -274 905 nm Wavelength Laser as a Means for in situ End-Point Detection of Dry Etching of AlxGa 1−x As on GaAs. -A new 905 nm infrared laser source is developed for in situ end-point detection of etching of AlxGa 1−x As over GaAs. Light from a conventional 670 nm laser is strongly absorbed in both GaAs and AlxGa 1−x As materials and no interference is detected. Light from a 905 nm laser exhibits some interference with AlxGa 1−x As and no interference with GaAs due to absorption. This will produce a noticeable difference of signal patterns for etching of the two materials. -(LEE, J. W.; WESTERMAN, R.; MACKENZIE, K. D.; DONOHUE, J. F.; JOHNSON, D.; SASSERATH, J. N.; LIDDANE, K.; PEARTON, S. J.; Electrochem. Solid-State Lett. 2 (1999) 12, 640-641; Plasma-Therm, Incorp., St. Petersburg, FL 33716, USA; EN)
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