Untitled

Orlikovskii, A. A.; Руденко, К. В.

doi:10.1023/a:1009430025956

Cited by 6 publications

(1 citation statement)

References 99 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Low-pressure plasma processes ͑Ͻ100 mtorr͒ have been gaining importance in recent years for a variety of applications, ranging from surface treatment [1][2][3][4][5][6][7] and thin film deposition [8][9][10] to reactive ion etching ͑RIE͒, [11][12][13][14] ion cutting, 15,16 and plasma immersion ion implantation ͑PIII͒. 17,18 As such, they are used in a wide range of ion energy E i ͑E i ϳ 10°-ϳ 10 4 eV͒ and flux i ͑ i ϳ 10 14 to ϳ 10 16 cm −2 s −1 ͒ conditions with a variety of gas phase species.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study

Amassian

Švec

Desjardins

et al. 2006

Journal of Applied Physics

View full text Add to dashboard Cite

Ion beam generation from sheath field of grid electrode and its application to surface treatment Ion-surface interactions on c -Si ( 001 ) at the radiofrequency-powered electrode in low-pressure plasmas: Ex situ spectroscopic ellipsometry and Monte Carlo simulation study J. Vac. Sci. Technol. A 24, 45 (2006); 10.1116/1.2134709 Modeling of the target surface modification by reactive ion implantation during magnetron sputtering Low-pressure O 2 plasma exposures were performed on c-Si͑001͒ at a radio frequency ͑rf͒-powered electrode in the presence of substrate self-biasing ͑V B ͒ from V B = −60 to − 600 V, in order to evaluate ion-surface interactions at the growth surface under ion bombardment conditions suitable for the fabrication of high quality optical coatings. The plasma-surface interactions were monitored in situ using real-time spectroscopic ellipsometry ͑RTSE͒, which reveals time-and ion-fluence-resolved information about depth-dependent modifications, such as damage and oxidation below the c-Si substrate surface. RTSE analysis indicates almost immediate damage formation ͑Ӷ1 s͒ to a depth of a few nanometers below the surface after exposure to a low oxygen ion fluence ͑ϳ5 ϫ 10 14 O cm −2 ͒. Oxide growth is detected at intermediate fluence ͑ϳ10 15 -10 16 O cm −2 ͒ and is attributed to O subplantation ͑shallow implantation͒; it forms near the surface of the target on top of an O-deficient interfacial damage layer ͑DL͒. Both layers experience a self-limiting growth behavior at high fluence ͑Ͼ10 17 cm −2 ͒ as oxide and DL thicknesses reach bias-dependent steady-state values, determined by the maximum ion penetration depth, which increases from ϳ3.6 to 9.5 nm for V B = −60 to − 600 V. The in situ experimental study was complemented by Monte Carlo TRIDYN simulations based on the binary collision approximation, which were modified to calculate dynamic changes in the composition of a target exposed to a broad-energy ion source ͑rf plasma source͒ at high fluence. Simulation results are found to agree exceptionally well with experiment. In addition, they reveal that the 1.2-3.5-nm-thick DL formed in the steady-state regime is a result of ͑1͒ damage formation due to the presence of a small number of high energy O + ions in the plasma environment, capable of penetrating and damaging up to 3 nm deeper than the majority ion population ͑O 2 + ͒, and ͑2͒ because of important surface motion resulting from oxidation-induced swelling ͑at low fluence͒ and sputtering-induced recession ͑at high fluence͒. Surface motion in general is found to inhibit oxygen incorporation at high depth in the substrate, thus forming the O-deficient DL. We discuss the implications of these findings on optical coatings deposition and propose a growth mechanism for coatings subjected to intense ion bombardment.

show abstract