Electrical Effects in GaAs and AlGaAs during Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition of SiN[sub x] Films

Hahn, Yoon‐Bong; Lee, J. W.; Mackenzie, Kenneth D.; Johnson, D.; Hays, David C.; Abernathy, C. R.; Pearton, S. J.

doi:10.1149/1.1390695

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…In particular, plasma‐assisted CVD techniques offer the advantage of high deposition rates at low temperatures (<200 °C). There are two main techniques in this category: the plasma‐enhanced CVD (PECVD) and the inductively coupled plasma CVD (ICP‐CVD) methods . For the PECVD technique, highly energetic ion bombardment induces damages on the surface of fragile materials and alters its functionality, whereas the ICP‐CVD method reduces these effects and provides higher plasma densities, with very good homogeneous spatial distribution resulting in high‐density and high‐quality materials .…”

Section: Introductionmentioning

confidence: 99%

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Yang

Sagazan

Pichon

et al. 2020

Physica Status Solidi (a)

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Herein, an inductively coupled plasma chemical vapor deposition (CVD) (ICP‐CVD) technique is adopted for deposition of silicon dioxide and silicon thin films to fabricate metal–oxide–semiconductor (MOS) capacitors and thin film transistors (TFTs). Prior to the fabrication and characterization of the TFTs, C–V measurements and breakdown tests are conducted on MOS capacitors based on silicon dioxide deposited under temperatures as low as 20 °C. The breakdown field of 9 MV cm−1 is validated afterward, which implies the good electrical insulating property for acting as a gate insulator and the feasibility of the TFTs. After going through forming gas and thermal annealing with the highest temperature of 220 °C, the TFTs yield good gate insulating properties, a threshold voltage of 3.7 V, an on/off ratio of 6.4 × 102, field effect mobility of 1.2 cm2 (V s)−1, and a subthreshold slope of 3.9 V dec−1. They show promising electrical properties under such a low‐temperature fabrication process using ICP‐CVD technique compatible for silicon electronics using low‐cost flexible substrates.

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Section: Introductionmentioning

confidence: 99%

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Yang

Sagazan

Pichon

et al. 2020

Physica Status Solidi (a)

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Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

et al. 1999

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High-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200 °C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH 4 /N 2 /Ar and SiH 4 /NH 3 /He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH 4 /O 2 /Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

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Electrical Effects in GaAs and AlGaAs during Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition of SiN[sub x] Films

Cited by 2 publications

References 7 publications

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Inductively Coupled Plasma Chemical Vapor Deposition for Silicon‐Based Technology Compatible with Low‐Temperature (≤220 °C) Flexible Substrates

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

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