Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

Palmier, J.F.; Minot, C.; Lievin, J.L.; Alexandre, François; Harmand, J. C.; Dangla, J.; Dubon‐Chevallier, C.; Ankri, D.

doi:10.1063/1.97380

Cited by 48 publications

(3 citation statements)

References 12 publications

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“…In unipolar devices, miniband conduction and the miniband negative differential velocity are well-established, in agreement with the Esaki-Tsu law, which is derived from both semiclassical and quantum transport [9][10][11]. In this regime of nonlinear transport that does not involve Bloch oscillations, the coherent oscillatory dynamics is averaged out.…”

Section: Introductionsupporting

confidence: 74%

Voltage bistability of coherent electron injection and nonlinear dynamics of a Bloch oscillation in a semiconductor superlattice

et al. 2015

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Voltage bistability is demonstrated at low temperature in a biased unipolar GaAs/AlGaAs superlattice, using a design based on tunneling from a charge reservoir into a Wannier-Stark ladder and competition between nearest and next-nearest neighbor coherent injection channels. The static conduction characteristics are accounted for by a density matrix approach of coherent injection in an inhomogeneous three-level system with resistive load. Electrostatic retroaction on the energy levels is shown to provide an adequate nonlinear feedback mechanism for bistability, as well as for other instability regimes including sustained Bloch oscillation above a retroaction threshold.

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Section: Introductionsupporting

confidence: 74%

Voltage bistability of coherent electron injection and nonlinear dynamics of a Bloch oscillation in a semiconductor superlattice

et al. 2015

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“…26) are suitable devices for the kind of measurementes we proposed, provided that they are built with the dimer constraint. Electronic transport through the so built CDSL can be measured either by techniques that employ magnetic or electric fields, 40 or by all-optical procedures, 41 or by a combination of both that helps avoid the intrinsic experimental problems of each of them.…”

Section: Discussionmentioning

confidence: 99%

Absence of localization and large dc conductance in random superlattices with correlated disorder

1994

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We study how the influence of structural correlations in disordered systems manifests itself in experimentally measurable magnitudes, focusing on dc conductance of semiconductor superlattices with general potential profiles. We show that the existence of bands of extended states in these structures gives rise to very noticeable peaks in the finite temperature dc conductance as the chemical potential is moved through the bands or as the temperature is increased from zero. On the basis of these results we discuss how dc conductance measurements can provide information on the location and width of the bands of extended states. Our predictions can be used to demonstrate experimentally that structural correlations inhibit the localization effects of disorder.

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“…Les phototransistors permettent une conversion optique/électrique avec amplification du signal électrique. La rapidité intrinsèque du transistor limite la durée minimale accessible, ce qui donne par ailleurs un moyen d'étudier la réponse du transistor luimême [34]. L'intérêt de cette méthode d'excitation électrique réside dans le fait que chaque transistor d'un circuit est un phototransistor dont la base peut Fig.…”

Section: Techniques De Mesure En Régime Picose-conde Et Domaines D'apunclassified

Applications des lasers picosecondes à l'optoélectronique

Chesnoy

1989

Rev. Phys. Appl. (Paris)

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Article de mise au point Résumé. 2014 Cet article tend à dégager parmi les techniques laser ultra-rapides (picosecondes et femtosecondes) celles qui devraient être appelées à un développement dans le domaine de l'électronique, de l'optoélectronique et des télécommunications. Sont d'abord analysées les possibilités d'étude de circuits électroniques ultrarapides par laser picoseconde. Les possibilités d'étude de circuits optoélectroniques sont ensuite considérées ainsi que le développement d'appareillages possibles dans ce domaine. Les applications potentielles des lasers à impulsions brèves aux télécommunications à haut débit sont aussi analysées et l'accent est finalement mis sur les éventuels développements dans le domaine de l'optoélectronique hyperfréquence. Le développement de sources picosecondes compactes et simples, probablement à base de diodes laser, amorcerait l'expansion industrielle de ces techniques nouvelles.

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Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

Abstract: A new functional, resonanttunneling bipolar transistor with a superlattice emitter

Cited by 48 publications

References 12 publications

Voltage bistability of coherent electron injection and nonlinear dynamics of a Bloch oscillation in a semiconductor superlattice

Voltage bistability of coherent electron injection and nonlinear dynamics of a Bloch oscillation in a semiconductor superlattice

Absence of localization and large dc conductance in random superlattices with correlated disorder

Applications des lasers picosecondes à l'optoélectronique

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