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(SnS) m (Sb 2 S 3) n thin films were prepared by thermal evaporation using the glancing angle deposition technique (GLAD). The incident angle between the particle flux and the normal to the substrate was fixed at 80°. The Raman and XRD characterization revealed the amorphous character of the films due to the columnar structure as shown by the SEM characterization and AFM analysis. A strong change of the surface morphology of the films was observed and it depends on the composition. Optical properties were extracted from transmittance T and reflectance R spectra. (SnS) m (Sb 2 S 3) n thin films exhibit high absorption coefficients (10 4-2×10 5 cm-1) in the visible range and the higher values were obtained for Sn 3 Sb 2 S 6 and it has the highest photocurrent values. The direct band gap (E g dir) was in the range 2.11-1.67 eV. The refractive indices are calculated from optical transmittance spectra of the films. The Sn 3 Sb 2 S 6 sample exhibits a lower refractive index. All the dispersion curves of refractive index match well with the Cauchy dispersion formula and they were analyzed using Wemple-DiDomenico model. The Bruggeman effective medium approximation EMA was used to calculate the packing density of different compositions, and SnSb 4 S 7 sample has the highest

CuIn 2n+1 S 3n+2 crystals were synthesized by horizontal Bridgman method using high purity copper, indium, sulfur elements. The phases and crystallographic structure of the CuIn 2n+1 S 3n+2 crystals were analyzed by X-ray diffraction (XRD) and the composition of the material powders was determined using the energy dispersive X-ray analysis (EDX). Measurement data revealed that CuIn 2n+1 S 3n+2 materials have not the same structure. In fact, CuInS 2 and CuIn 3 S 5 crystallize in the chalcopyrite structure whereas CuIn 5 S 8 , CuIn 7 S 11 and CuIn 11 S 17 crystallize in the cubic spinel structure.

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In this work, Cu x O thin films were obtained by air annealing of copper thin films deposited on glass substrates using thermal evaporation method by Glancing Angle Deposition "GLAD" technique. The copper was sculptured into a zigzag shape, which presents two columns with inclined angles + and-where is the deposition angle between the incident flux and the substrate normal. Morphological, structural, optical and electrical properties of the obtained thin films were investigated using X-ray diffraction (XRD), UV-Vis-NIR Spectroscopy and electrical resistivity measurements. The XRD patterns revealed that thin films deposited at different incident angles are mainly crystallized in Cu 2 O cubic phase characterized by the preferential orientation along (111) plane. The optical parameters were calculated from the analysis of the transmittance and reflectance spectra in the wavelength range 300-1800 nm. Theabsorptioncoefficient exceeds 10 5 cm-1 in the visible and NIR spectral ranges. Direct band gap energy increases from 2 to 2.54 eV with deposition angle. The in-plane birefringence and the anisotropic resistivity of the Cu 2 O films were also studied. Their maxima were obtained at incident flux angle of = 60°. Therefore, the GLAD technique is a promising way to create zigzag nanostructures with enhanced anisotropic properties.