Synthesis and Characterization of CuIn<sub>2n+1</sub> S<sub>3n+2</sub> (with n = 0, 1, 2, 3 and 5) Powders

Abstract

CuIn 2n+1 S 3n+2 crystals were synthesized by horizontal Bridgman method using high purity copper, indium, sulfur elements. The phases and crystallographic structure of the CuIn 2n+1 S 3n+2 crystals were analyzed by X-ray diffraction (XRD) and the composition of the material powders was determined using the energy dispersive X-ray analysis (EDX). Measurement data revealed that CuIn 2n+1 S 3n+2 materials have not the same structure. In fact, CuInS 2 and CuIn 3 S 5 crystallize in the chalcopyrite structure whereas CuIn 5 S 8 , CuIn 7 S 11 and CuIn 11 S 17 crystallize in the cubic spinel structure.

Crystallography characteristics of tetragonal nano-zirconia films under various oxygen partial pressure

“… is peak width at half height (FWHM), is the crystal diffraction angle (111). λ is the wavelength of X-ray and is equal to 1.5406 Å. Utilizing the obtained “d” interplanar spacing of the major crystalline plane (111) based on the XRD data, the lattice parameters ‘a’ and ‘c’ were calculated from the following equation [14]: The tetragonal distortion is given directly by the tetragonality [15]. Figure 2 shows the average crystallite size and tetragonality of the ZrO films as a function of the oxygen partial pressure.…”

“…b hkl is peak width at half height (FWHM), u hkl is the crystal diffraction angle (111). λ is the wavelength of X-ray and is equal to 1.5406 Å. Utilizing the obtained "d" interplanar spacing of the major crystalline plane (111) based on the XRD data, the lattice parameters 'a' and 'c' were calculated from the following equation [14]:…”

Structural and optical analysis of single phase CuInS2 nanocrystals for solar cell applications

“…This slow heating process is essential between 100 to 350 °C to avoid sudden heat release due to exothermic reaction between Sulfur and Indium at this temperature. 18,28) The ampoules have been further heated up to 1150 °C at heating rate of 10 °C=min to get the molten solid of elemental mixture. Finally, the molten solid has been kept at 1150 °C constantly for 5 h to obtain a homogeneous mixture.…”

CH3NH3PbI3thin films prepared by hot-casting technique in the air: growth mechanism, trap states and relating solar cells

“…The transition to the trapped holes is annihilated significantly whereas the quenching of holes in the valence band is more efficient as the observed reduction in 794 nm peak. However, when PTAA with the highest occupied molecular orbital (HOMO) level of −5.2 eV 20) is used as a quencher as shown in Figs. 7(c) and 7(d), the quenching relevant to trapped holes is hampered while there are other emerging peaks.…”

“…All observed peaks were deconvoluted using the pseudo-Voigt function to identify the centers of peaks using the Origin 9.0 software. The X-ray diffraction (XRD) patterns were treated manually by extrapolation method using Nelson-Riley plot 19,20) to specify lattice parameter a of the tetragonal. The lattice parameter c was then evaluated by the average values from several diffracted peaks after subtracting the specimen displacement effect.…”