Linear and non linear optical properties of Sb2Se3 thin films elaborated from nano-crystalline mechanically alloyed powder

Hamrouni, Raouia; Segmane, N. E. H.; Abdelkader, D.; Amara, A.; Drici, A.; Bououdina, M.; Akkari, F. Chaffar; Khémiri, N.; Bechiri, L.; Kanzari, M.; Bérnède, J.C.

doi:10.1007/s00339-018-2274-1

Cited by 28 publications

(11 citation statements)

References 53 publications

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“…The effect of proton irradiation on the prepared film gives rise to three extra peaks at 148, 198, and 252 cm –1 with comparatively decreased intensity compared to that of the as-prepared film. The primary intense peaks in the irradiated film at 148 cm –1 (A 2 2u mode) and 252 cm –1 are linked to the Sb–Sb bond in the (Se 2 ) Sb–Sb (Se 2 ) structural unit. Similarly, the 198 cm –1 peak denotes the heteropolar Se–Sb bond stretching mode in (SbSe 3/2 ) pyramids connected through a bridging Se. , Among all ion-irradiated films, we observe that the weakly ion-irradiated film, i.e., 5 × 10 15 ions/cm 2 , shows a higher intensity, which shows more structural changes in the film and decreased with a further increase in ion dose.…”

Section: Resultsmentioning

confidence: 99%

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Priyadarshini¹,

Alagarasan

Ganesan

et al. 2022

ACS Appl. Opt. Mater.

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This study investigates the effects of 30 keV proton ion irradiation on the structural, morphological, and linear–nonlinear optoelectronic properties of Sb40Se20S40 thin films. The retention of an amorphous nature and vibrational bonding rearrangements caused by ion irradiation demonstrate structural tailoring. The cumulative decrease in roughness with an increase in ion dose decreases the surface energy and optical absorption loss. With the blue shifting of the absorption edges, proton irradiation increased the optical transmittance and reflectance. The variation of fluence changes the optical bandgap and Urbach energy, which are induced by local structural changes caused by defects and disorder. The refractive index decreased considerably, which supports the Moss rule. Proton irradiation reduced the interband transition and average band energy gap of the system. However, ion irradiation increased optical losses while decreasing optical conductivity and dielectric characteristics. The third-order nonlinear susceptibility and nonlinear refractive index decreased significantly as the fluence increased. Such materials with optical tuning capabilities via ion fluence are essential for cutting-edge photonic and optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Priyadarshini¹,

Alagarasan

Ganesan

et al. 2022

ACS Appl. Opt. Mater.

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“…Sb 2 Se 3 is a p-type semiconductor that exhibits low electrical conductivity with an excellent photoresponse [32][33][34], and crystallizes in a one-dimensional structure where the ribbons are held together by van der Waals forces [35]. This structure contributes to poor carrier transport and mobility between the ribbons [36] with various reported band gaps in the range of 1.2-1.8 eV [37,38]. The XRD pattern of the annealed thin film with 17 W of sputtering power does not show any dominant peak, but there are many peaks with low intensity, as shown in Figure 3c.…”

Section: Resultsmentioning

confidence: 99%

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Kim

2020

Coatings

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When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.

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“…The moments of optical dispersion spectra, M À1 and M À3 can be evaluated using the relations (3) and ( 4), where Ε o and E d retains their usual meanings [10]. In contrast to other dispersion parameters, the optical dispersion moments of SnS 0.7 Se 0.3 layers were slightly increased with T S (see Table 1).…”

Section: Dispersion Propertiesmentioning

confidence: 99%

Optical and dispersion parameters of co-evaporated SnS0.7Se0.3 thin films

Saritha

Rasool

Reddy

et al. 2021

Materials Today: Proceedings

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Tin sulfoselenide (SnS 1-x Se x ) is a novel ternary semiconductor that belongs to the IV -VI group of compounds. It possesses the properties of both SnS and SnSe, which are proved as good absorber materials for solar cell fabrication. In the present work, SnS 0.7 Se 0.3 thin films were deposited by vacuum co-evaporation technique at four different substrate temperatures (T s ), 200°C, 250°C, 300°C and 350°C. The optical properties of as-deposited SnS 0.7 Se 0.3 films were analyzed using optical measurements. From the optical transmittance and reflectance data, the band gap energy of the layers was determined that varied in the range, 1.59-1.46 eV. The other optical parameters such as skin depth, refractive index, extinction coefficient, optical conductivity and dielectric constant of SnS 0.7 Se 0.3 layers were determined and discussed as a function of substrate temperature. Moreover, the dispersion parameters of the layers were also evaluated using Wemple -DiDomenico (WDD) single oscillator model. The dispersion energy (E d ) and oscillator energy (Ε o ) of the films were evaluated and varied in the range, 2.19-2.38 eV and 7.55-9.52 eV respectively. Moreover, the optical dispersion moments (M À1 and M À3 ) were also calculated that were varied from 0.25 to 0.29 and from 2.76 Â 10 -3 to 5.08 Â 10 -3 respectively.

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Linear and non linear optical properties of Sb2Se3 thin films elaborated from nano-crystalline mechanically alloyed powder

Cited by 28 publications

References 53 publications

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Optical and dispersion parameters of co-evaporated SnS0.7Se0.3 thin films

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Linear and non linear optical properties of Sb2Se3 thin films elaborated from nano-crystalline mechanically alloyed powder

Cited by 28 publications

References 53 publications

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Optical and dispersion parameters of co-evaporated SnS0.7Se0.3 thin films

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Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices