River networks evolve as migrating drainage divides reshape river basins and change network topology by capture of river channels. We demonstrate that a characteristic metric of river network geometry gauges the horizontal motion of drainage divides. Assessing this metric throughout a landscape maps the dynamic states of entire river networks, revealing diverse conditions: Drainage divides in the Loess Plateau of China appear stationary; the young topography of Taiwan has migrating divides driving adjustment of major basins; and rivers draining the ancient landscape of the southeastern United States are reorganizing in response to escarpment retreat and coastal advance. The ability to measure the dynamic reorganization of river basins presents opportunities to examine landscape-scale interactions among tectonics, erosion, and ecology.

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

Background The effect of different surgical techniques for ridge preservation on soft tissue parameters has seldom been investigated. The objective of this study was to compare the effect of two different ridge preservation techniques on soft and hard tissue dimensions. Methods Thirty patients requiring tooth extraction were randomly allocated to either control group C (allograft covered with a non‐crosslinked collagen membrane with primary closure) or experimental group E (allograft covered with cross‐linked collagen membrane left exposed). Sites were surgically re‐entered at 6 months. Soft and hard tissue measurements, cone beam computed tomography (CBCT), and cast measurements were taken at baseline and 6 months. Results Twenty‐eight patients were included in this analysis. When the two treatment groups were compared, the width of the buccal keratinized tissue in the E group showed an increase of 0.43 ± 0.42 mm compared to net loss of 1.57 ± 0.51 mm for the C (P = 0.006). Similarly, buccal tissue thickness has increased in the E group 0.46 ± 0.22 mm compared to a loss of 0.15 ± 0.23 mm in the C group (P = 0.068). Volumetric assessment of the changes in the alveolar ridge for the E group showed a slight decrease (68.3 ± 17 mm3) whereas the C group has experienced almost double this loss (107.5 ± 11 mm3; P = 0.07). Crestal width, measured on the CBCT scan, has shown significant reduction in the C group (4.18 ± 0.56 mm) compared to only 1.74 ± 0.4 mm in the E group (P = 0.003). Conclusion Crosslinked collagen membrane with allograft placed intentionally non‐submerged resulted in better preservation of the keratinized tissues (width and thickness) with similar and at times better osseous preservation following extraction.

32-inch TFT-LCD Panel using the amorphous indium-galliumzinc-oxide (a-IGZO) thin-film transistors (TFTs) is demonstrated in this study. The size of 32-inch TFT-LCD driven by a-IGZO TFTs was the top two largest sizes in our limited information. Less report was larger than the size of 32-inch a-IGZO TFT-LCDs. To realize a-IGZO TFTs driving the large size TFT-LCD panel, bottom gate structure is proposed. High performance a-IGZO TFTs is achieved successfully to ligh-on the 32-inch LCD panel. Uniform electrical characteristic is obtained on the coplanar type TFTs. The field effect mobility is 5.16 cm 2 /Vs, threshold voltage is 0.5 V, sub-threshold swing is 0.38 V/decade, and on/off current ratio is 1.8 x 10 8 . After 1000 sec DC gate bias stress at -30 V, the threshold voltage shifts is less than 1.1 V.

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