Light manipulation is paramountly important to the fabrication of high‐performance optoelectronic devices such as solar cells and photodetectors. In this study, a high‐performance near‐infrared light nanophotodetector (NIRPD) was fabricated based on a germanium nanoneedles array (GeNNs array) with strong light confining capability, and single‐layer graphene (SLG) modified with heavily doped indium tin oxide nanoparticles (ITONPs), which were capable of inducing localized surface plasmon resonance (LSPR) under NIR irradiation. An optoelectronic study shows that after modification with ITONPs the device performance including photocurrent, responsivity and detectivity was considerably improved. In addition, the ITONPs@SLG/GeNNs array NIRPD was able to monitor fast‐switching optical signals, the frequency was as high as 1 MHz, with very fast response rates. Theoretical simulations based on finite‐element method (FEM) revealed that the observed high performance was not only due to the strong light‐confining capability of the GeNNs array, but also due to the plasmonic ITONPs‐induced hot electron injection. The above results suggest that the present NIRPD will have great potential in future optoelectronic devices application.

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A sensitive self-powered near infrared light photodetector was fabricated by coating a freestanding silicon nanowire (SiNW) array with a layer of Cu nanofilm.

A high-performance red light nano-photodetector was constructed by modifying a multi-layer graphene (MLG)–CdSe nanoribbon Schottky junction with hexagonal copper nanoparticles with localized surface plasmon resonance (LSPR).

A high performance hollow gold nanoparticles (HGNs) decorated one-dimensional (1-D) Bi 2 S 3 nanoribbon (NR) photodetector was fabricated for green light detection (560 nm).

In this work, we present a plasmonic near infrared light photodetector for the detection of 980 nm illumination. The plasmonic photodetector is fabricated by modifying single layer graphene (SLG)/InP Schottky junction diode with SiO2 encapsulated gold nanorods (SiO2@AuNR), which can confine the incident NIR light by inducing obvious localized surface plasmon resonance, according to theoretical simulation based on finite element method. This study shows that after decoration with plasmonic SiO2@AuNR, the device performance in terms of photocurrent and responsivity is considerably enhanced. In addition, the device exhibited a very fast respose rate which is able to monitor switching optical signals with a frequency as high as 1 MHz, suggesting a potential application for sensing high‐frequency optical signals. This study manifests that the present plasmonic NIR photodetector will have great potential in future optoelectronic devices application.

in various optoelectronic devices and systems including solar cells, [ 8,9 ] lightemitting diodes (LEDs), [ 10,11 ] nanophotonic switches, [12][13][14] nanoantennas, [ 15,16 ] water splitters, [ 17,18 ] photocatalysts, [ 19 ] optical waveguides, [ 20 ] and nanolasers. [ 21 ] Although LSPR is widely observed in noble metal nanoparticles (NMNs) due to the high density of electrons, it is not limited to NMNs and can also be achieved in some poor metal nanoparticles (PMNs) including indium, tin, copper, and even aluminium with a high density of free electrons. In comparison to noble nanoparticles, the PMNs are advantageous in the following two respects: plasmonic materials made of PMNs are much cheaper to synthesize due to their natural abundance in the Earth, which make them highly competitive building blocks for various applications, and, unlikeNMNs with their tunable LSPR normally in the visible and infrared regions (AuNPs: ≈520 nm; Au nanorods: 900 nm; AgNPs: ≈460 nm), the plasmonic properties of PMNs can be readily extended across a broader electromagnetic spectrum (AlNPs: 200-250 nm, InNPs: 300-700 nm, CuNPs: 600-900 nm). In spite of the apparent advantages of plasmonic PMNs, there is a scarcity of studies about the utilization of plasmonic PMNs for various device applications, which has been successfully achieved by plasmonic NMNs. Here in this contribution, we present a novel 1D semiconductor nanostructure-based photo detector, which may fi nd potential application in military surveillance, target detection, and light vision. [ 22,23 ] The device was composed of a highly aligned hexagonal plasmonic InNP-modifi ed ZnSe nanoribbon (ZnSeNR)/single layer graphene (SLG) Schottky junction. Indium nanoparticles were chosen not only because they display an obvious LSPR effect like other noble metal nanoparticles (Au, Ag, and Pt), but also the LSPR band of In nanoparticles is nearly identical to the bandgap of ZnSeNR. Theoretical simulations and device analysis reveal that the InNP array can induce LSPRs which are capable of trapping incident light effi ciently and enhancing the electric fi eld near the semiconductor nanostructures, leading to enhanced photo currents and an increase of key device parameters including responsivity and detectivity. This result suggests that plasmonic PMNs are highly competitive alternatives to boost the device performance of optoelectronic systems.Plasmonic nanostructures composed of poor metals (e.g., In, Cu, Al) have lately received increasing interest due to their low cost and natural abundance relative to noble metal nanoparticles (e.g., Au, Ag, Pt). To date, while considerable progress has been achieved with regard to the utilization of plasmonic noble metal nanostructures for optimizing various optoelectronic devices, little work has been performed to study the device appplication of poor metals. In this study, a high-performance blue light nano-photodetector is induced through the use of a highly ordered indium nanoparticle (InNP) array. Electrical analysis reveals that, after de...

In this study, we report a localized surface plasmon resonance (LSPR) enhanced optoelectronic device based on a ZnSe:Sb nanoribbon (NR)/Si nano-heterojunction. We experimentally demonstrated that the LSPR peaks of plasmonic Ag nanoparticles (Ag NPs) can be readily tuned by changing their size distribution. Optical analysis reveals that the absorption of ZnSe:Sb NRs was increased after the decoration of the Ag NPs with strong LSPR. Further analysis of the optoelectronic device confirmed the device performance can be promoted: for example, the short-circuit photocurrent density of the ZnSe/Si heterojunction solar cell was improved by 57.6% from 11.75 to 18.52 mA cm(-2) compared to that without Ag NPs. Meanwhile, the responsivity and detectivity of the ZnSe:Sb NRs/Si heterojunction device increased from 117.2 to 184.8 mA W(-1), and from 5.86 × 10(11) to 9.20 × 10(11) cm Hz(1/2) W(-1), respectively.