Core–shell silicon nanowire array–Cu nanofilm Schottky junction for a sensitive self-powered near-infrared photodetector

Wu, Chunyan; Pan, Zengxiang; Wang, Youyi; Ge, Cai-Wang; Yu, Yongqiang; Xu, Jiyu; Wang, Li; Luo, Lin‐Bao

doi:10.1039/c6tc03856e

Cited by 33 publications

(20 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During the optoelectronic process, the direction of the photo-generated electric field is opposite to that of the built-in electric field, which can weaken the separation of charge carriers ( Wang et al., 2017 , Heeger, 2014 ). Up to now, the p-n junction and Schottky barrier have been widely utilized to enhance built-in electric fields ( Zhao et al., 2017 , Wu et al., 2016 , Peng et al., 2017 , Yu et al., 2017 , Zhang et al., 2012 , Xiang et al., 2015 , Wu and Wang, 2016 ). However, the built-in potentials in these studies are always insufficient to control the transfer direction of charge pairs, limiting the resolution of dynamic light imaging and detection.…”

Section: Introductionmentioning

confidence: 99%

Photocurrent Polarity Controlled by Light Wavelength in Self-Powered ZnO Nanowires/SnS Photodetector System

2018

View full text Add to dashboard Cite

SummarySelf-powered photodetectors are expected to play a crucial role in future nano-optoelectronic devices owing to their independent and sustainable operation. Based on the heterojunction between ZnO nanowires (NWs) and shuttle-like SnS, we design a self-powered photodetector exhibiting wide-range photoresponse and tunable spectral selectivity. Differently from conventional devices, a wavelength-induced photocurrent polarity is observed in the ZnO NWs/SnS photodetector, which enables the device to distinguish between photons in the UV and visible (VIS) regions. This is due to switching of the interfacial modulation by the pyroelectric-polarization potential (pyro-potential) inside ZnO NWs and thermoelectric-polarization potential (thermo-potential) inside SnS. A photocurrent enhancement of 125% and improved responsivity of 364 μA/W are obtained under the pyro-potential upon 690 nm light illumination, whereas reversed responsivity of −155 μA/W is obtained under the thermo-potential upon 365 nm light illumination. We believe the photocurrent polarity could be useful for improving resolution of dynamic light sensing/imaging.

show abstract

Section: Introductionmentioning

confidence: 99%

Photocurrent Polarity Controlled by Light Wavelength in Self-Powered ZnO Nanowires/SnS Photodetector System

2018

View full text Add to dashboard Cite

show abstract

“…The first avalanche photodetectors (APD)-based nanoscale p–i–n junction Si nanowire (SiNW) was demonstrated in 2006 and this device showed an avalanche breakdown mechanism with large reverse bias [ 52 ]. After that, several studies were performed on Schottky junction NIR photodiodes and nano-heterojunction NIR-PDs based on SiNW [ 53 ] combined with metal films (e.g., Cu [ 54 ], Ag [ 55 ] and Au/Cr [ 56 ]), graphene oxide [ 57 ], and other nanostructured semiconductor comprising carbon quantum dots [ 58 ].…”

Section: Group IV Semiconductorsmentioning

confidence: 99%

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Dardano

Ferrara

2020

Micromachines

View full text Add to dashboard Cite

With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

show abstract

“…In addition, metal/semiconductor vertical core–shell photodetectors such as Ag/Si or Cu/Si have been studied. Ramadurgam and Yang simulated semiconductor–metal–semiconductor core–multishell nanowire structure to offer a high visible range tenability using plasmon hybridization with low loss, isotropic, and polarization‐dependent negative‐index metamaterial properties .…”

Section: Hybrid Nanowire Devices: a Solution For Optoelectronicsmentioning

confidence: 99%

“…Ramadurgam and Yang simulated semiconductor–metal–semiconductor core–multishell nanowire structure to offer a high visible range tenability using plasmon hybridization with low loss, isotropic, and polarization‐dependent negative‐index metamaterial properties . Cu nanofilm and Si heterostructures improve the device to detect NIR light with fast and high on/off switching characteristics . Similarly perovskite (CH 3 NH 3 PbI 3 )/SiNW core–shell photodetector could detect NIR light .…”

Section: Hybrid Nanowire Devices: a Solution For Optoelectronicsmentioning

confidence: 99%

Hybrid Silicon Nanowire Devices and Their Functional Diversity

et al. 2019

View full text Add to dashboard Cite

In the pool of nanostructured materials, silicon nanostructures are known as conventionally used building blocks of commercially available electronic devices. Their application areas span from miniaturized elements of devices and circuits to ultrasensitive biosensors for diagnostics. In this Review, the current trends in the developments of silicon nanowire‐based devices are summarized, and their functionalities, novel architectures, and applications are discussed from the point of view of analog electronics, arisen from the ability of (bio)chemical gating of the carrier channel. Hybrid nanowire‐based devices are introduced and described as systems decorated by, e.g., organic complexes (biomolecules, polymers, and organic films), aimed to substantially extend their functionality, compared to traditional systems. Their functional diversity is explored considering their architecture as well as areas of their applications, outlining several groups of devices that benefit from the coatings. The first group is the biosensors that are able to represent label‐free assays thanks to the attached biological receptors. The second group is represented by devices for optoelectronics that acquire higher optical sensitivity or efficiency due to the specific photosensitive decoration of the nanowires. Finally, the so‐called new bioinspired neuromorphic devices are shown, which are aimed to mimic the functions of the biological cells, e.g., neurons and synapses.

show abstract

Core–shell silicon nanowire array–Cu nanofilm Schottky junction for a sensitive self-powered near-infrared photodetector

Abstract: A sensitive self-powered near infrared light photodetector was fabricated by coating a freestanding silicon nanowire (SiNW) array with a layer of Cu nanofilm.

Cited by 33 publications

References 27 publications

Photocurrent Polarity Controlled by Light Wavelength in Self-Powered ZnO Nanowires/SnS Photodetector System

Photocurrent Polarity Controlled by Light Wavelength in Self-Powered ZnO Nanowires/SnS Photodetector System

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Hybrid Silicon Nanowire Devices and Their Functional Diversity

Contact Info

Product

Resources

About