Hybrid Silicon Nanowire Devices and Their Functional Diversity

Baraban, Larysa; Ibarlucea, Bergoi; Baek, Eunhye; Cuniberti, Gianaurelio

doi:10.1002/advs.201900522

Cited by 59 publications

(44 citation statements)

References 285 publications

(739 reference statements)

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“…Among all these nanostructures, silicon nanowires (SiNWs) have demonstrated substantial advantages due to their need for relatively standard processing techniques, which allows for integration with standard complementary metal oxide semiconductor (CMOS) processes for very large scale production [27,28]. In addition, Si-based NWs' gas sensing is more flexible for doping concentration and their surface can be chemically functionalized for the selective detection of molecules in gas phase [29].…”

Section: Introductionmentioning

confidence: 99%

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Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

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Section: Introductionmentioning

confidence: 99%

“…In MONWs, the thickness of depletion layer on the metal oxide face dramatic changes upon exposure to reducing/oxidizing gas or volatile organic compounds [39,40]. In this case, SiNWs with low bandgap (1.12 eV) have higher sensitivity and present the advantage of operating at RT [29].…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowires for Gas Sensing: A Review

et al. 2020

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“…In literature reviews on the usage of SiNWs in cancer detection [ 31 , 32 ], biologically sensitive field-effect transistors [ 33 ], nanowires bioelectric interfaces [ 34 ], the detection principles of biological field-effect transistors [ 35 ], and the overall application and functionality of (hybrid) nanowires as (bio)sensors [ 36 , 37 , 38 ] have been already discussed. This review will summarize the technological “top-down” approaches of SiNWs-based biosensor fabrication to obtain highly sensitive nanoscale SiNW-FETs and analyze aspects that may lead to sensor-to-sensor variation.…”

Section: Introductionmentioning

confidence: 99%

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Tintelott

Pachauri

Ingebrandt

et al. 2021

Sensors

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Silicon nanowire field-effect transistors (SiNW-FET) have been studied as ultra-high sensitive sensors for the detection of biomolecules, metal ions, gas molecules and as an interface for biological systems due to their remarkable electronic properties. “Bottom-up” or “top-down” approaches that are used for the fabrication of SiNW-FET sensors have their respective limitations in terms of technology development. The “bottom-up” approach allows the synthesis of silicon nanowires (SiNW) in the range from a few nm to hundreds of nm in diameter. However, it is technologically challenging to realize reproducible bottom-up devices on a large scale for clinical biosensing applications. The top-down approach involves state-of-the-art lithography and nanofabrication techniques to cast SiNW down to a few 10s of nanometers in diameter out of high-quality Silicon-on-Insulator (SOI) wafers in a controlled environment, enabling the large-scale fabrication of sensors for a myriad of applications. The possibility of their wafer-scale integration in standard semiconductor processes makes SiNW-FETs one of the most promising candidates for the next generation of biosensor platforms for applications in healthcare and medicine. Although advanced fabrication techniques are employed for fabricating SiNW, the sensor-to-sensor variation in the fabrication processes is one of the limiting factors for a large-scale production towards commercial applications. To provide a detailed overview of the technical aspects responsible for this sensor-to-sensor variation, we critically review and discuss the fundamental aspects that could lead to such a sensor-to-sensor variation, focusing on fabrication parameters and processes described in the state-of-the-art literature. Furthermore, we discuss the impact of functionalization aspects, surface modification, and system integration of the SiNW-FET biosensors on post-fabrication-induced sensor-to-sensor variations for biosensing experiments.

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“…The function of nanostructured materials is connected to the structure itself, and ways of designing and realizing nanostructured materials and nanoparticles are often inspired by nature, e.g., in the form of self-assembly techniques, structural hierarchy, and fractals [1][2][3][4]. Their outstanding properties make nanoparticles and nanostructured materials suitable for use in optoelectronics, self-cleaning, and molecular sensors [5][6][7][8][9]. Nanostructured materials and their fractal properties have also been shown to improve focal adhesions of cultured neuronal cells with respect to flat surfaces such as a Petri dish [10,11].…”

Section: Introductionmentioning

confidence: 99%

Oscillatory Copper Deposition on Conical Iron Electrodes in a Nonuniform Magnetic Field

et al. 2021

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We report the effect of a magnetic field on the deposition of copper ions on a conically shaped iron probe. In our setup, the magnetic forces and buoyancy are the key factors influencing the electrolyte flow and the mass transfer. Without external current, a spontaneous reduction of copper on the iron cone occurs, known as electroless deposition. Mach–Zehnder and differential interferometry indicate a variation in the concentration of copper ions near the cone. After an initial transient of about 60 s, temporal oscillations in the copper concentration are found under the effect of a magnetic field. In galvanostatic conditions, a similar oscillatory behavior of the concentration of the electrolyte is observed. Numerical simulations show that the oscillations are caused by the magnetic gradient, Lorentz force, and buoyancy force counteracting one another, and the oscillation frequency is estimated analytically based on this mechanism. Furthermore, we present a study on the oscillation frequency for both electroless and galvanostatic conditions with different current densities. The results of this study may stimulate future research aimed at the local control of the deposition rate and the realization of miniaturized, regularly structured deposits using magnetic fields.

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Hybrid Silicon Nanowire Devices and Their Functional Diversity

Cited by 59 publications

References 285 publications

Silicon Nanowires for Gas Sensing: A Review

Silicon Nanowires for Gas Sensing: A Review

Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays

Oscillatory Copper Deposition on Conical Iron Electrodes in a Nonuniform Magnetic Field

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