The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have been made to study the gas sensing function of NWs. This review article presents the recent developments related to the applications of SiNWs for gas sensing. The content begins with the two basic synthesis approaches (top-down and bottom-up) whereby the advantages and disadvantages of each approach have been discussed. Afterwards, the basic sensing mechanism of SiNWs for both resistor and field effect transistor designs have been briefly described whereby the sensitivity and selectivity to gases after different functionalization methods have been further presented. In the final words, the challenges and future opportunities of SiNWs for gas sensing have been discussed.

The paper deals with investigations concerning the construction of sensors based on a quartz crystal microbalance (QCM) containing a TiO2 nanostructures sensor layer. A chemical method of synthesizing these nanostructures is presented. The prepared prototype of the QCM sensing system, as well as the results of tests for detecting low NO2 concentrations in an atmosphere of synthetic air have been described. The constructed NO2 sensors operate at room temperature, which is a great advantage, because resistance sensors based on wide gap semiconductors often require much higher operation temperatures, sometimes as high as 500 °C. The sensors constructed by the authors can be used, among other applications, in medical and chemical diagnostics, and also for the purpose of detecting explosive vapours. Reactions of the sensor to nitroglycerine vapours are presented as an example of its application. The influence of humidity on the operation of the sensor was studied.

Abstract. The paper presents a resistance structures with sensor layers based on nanostructures elaborated on the base of TiO2 and ZnO. The structures were tested concerning their sensitivities to the effects of nitrogen dioxide in the atmosphere of synthetic air. The TiO2 and ZnO nanostructures played the role of sensor layers. Investigations have proved that the elaborated resistance structures with TiO2 and ZnO layers are sensitive to the presence of NO2 in the atmosphere of synthetic air. The resistance of the structure amounted to about 20Ω in the case of ZnO structures and to about 200Ω in the case of TiO2 structures. The investigations confirmed that resistance structures with ZnO and TiO2, exposed to the effect of nitrogen dioxide in the atmosphere of synthetic air changes their resistances relatively fast. This indicates that such structures might be practically applied in sensors of nitrogen dioxide ensuring a short time of response.

This paper deals with experimental investigations of ZnO nanostructures, consisting of a mixture of nanoparticles and nanowires, obtained by the chemical (hydrothermal) method. The influences of both oxidizing (NO2) and reducing gases (H2, NH3), as well as relative humidity (RH) on the physical and chemical properties of ZnO nanostructures were tested. Carrier gas effect on the structure interaction with gases was also tested; experiments were conducted in air and nitrogen (N2) atmospheres. The effect of investigated gases on the resistance of the ZnO nanostructures was tested over a wide range of concentrations at room temperature (RT) and at 200 °C. The impact of near- ultraviolet (UV) excitation (λ = 390 nm) at RT was also studied. These investigations indicated a high response of ZnO nanostructures to small concentrations of NO2. The structure responses to 1 ppm of NO2 amounted to about: 600% in N2/230% in air at 200 °C (in dark conditions) and 430% in N2/340% in air at RT (with UV excitation). The response of the structure to the effect of NO2 at 200 °C is more than 105 times greater than the response to NH3, and more than 106 times greater than that to H2 in the relation of 1 ppm. Thus the selectivity of the structure for NO2 is very good. What is more, the selectivity to NO2 at RT with UV excitation increases in comparison at elevated temperature. This paper presents a great potential for practical applications of ZnO nanostructures (including nanoparticles) in resistive NO2 sensors.

The main object of this study is the improvement of the dynamics of NO2 sensors based on ZnO nanostructures. Investigations presented in this paper showed that the combination of temperature and ultraviolet (UV) activation of the sensors can significantly decrease the sensor response and regeneration times. In comparison with the single activation method (elevated temperature or UV), these times for 1 ppm of NO2 decreased from about 10 min (or more) to less than 40 s. In addition, at the optimal conditions (200 °C and UV), sensors were very stable, were fully scalable (in the range on NO2 concentration of 1–20 ppm) and baseline drift was significantly reduced. Furthermore, in this paper, extensive studies of the influence of temperature and carrier gas (nitrogen and air) on NO2 sensing properties of the ZnO nanostructures were conducted. The NO2 sensing mechanisms of the sensors operating at elevated temperatures and under UV irradiation were also discussed. Our study showed that sensor responses to NO2 and response/regeneration times are comparable from sensor to sensor in air and nitrogen conditions, which suggests that the proposed simple technology connected with well-chosen operation conditions is repeatable. The estimated limit of detection of the sensors is within the level of ≈800 ppb in nitrogen and ≈700 ppb in air.

In our environment, the large availability of wasted heat has motivated the search for methods to harvest heat. As a reliable way to supply energy, SiGe has been used for thermoelectric generators (TEGs) in space missions for decades. Recently, micro-thermoelectric generators (μTEG) have been shown to be a promising way to supply energy for the Internet of Things (IoT) by using daily waste heat. Combining the predominant CMOS compatibility with high electric conductivity and low thermal conductivity performance, Si nanowire and SiGe nanowire have been a candidate for μTEG. This review gives a comprehensive introduction of the Si, SiGe nanowires, and their possibility for μTEG. The basic thermoelectric principles, materials, structures, fabrication, measurements, and applications are discussed in depth.

In the paper the results of investigations are presented concerning the inuence of humidity of air on the resistance of a gas sensor structure with a graphene layer. The aects of nitrogen dioxide and humidity action on graphene were studied. We indicated that humidity might play an important role in determining the gas sensing properties of the graphene layer. In the paper it has been shown that in the case of a nitrogen oxide sensor, the reaction of NO2 with water vapour can generate permanent defects in graphene.

The paper presents resistance sensor structures with a graphene sensing layer. The structures were tested concerning their sensitivity to the affects of hydrogen, nitrogen dioxide and steam in an atmosphere of a synthetic air. Investigations have proved that resistance structures with a graphene layer are sensitive to the presence of the tested gases. The resistance of the structures amounted to about 10, whereas changes in the resistances affected by the external gaseous medium were contained within the range of a several m. The investigations confirmed that the resistance structures with graphene exposed to the affect of hydrogen in atmosphere of synthetic air change their resistances practically at once (within the order of only a few seconds). This indicates that such structures might be practically applied in sensors of hydrogen ensuring a short time of response.