Gas sensors based on nanostructures of semiconductors ZnO and TiO2

Abstract

Abstract. The paper presents a resistance structures with sensor layers based on nanostructures elaborated on the base of TiO2 and ZnO. The structures were tested concerning their sensitivities to the effects of nitrogen dioxide in the atmosphere of synthetic air. The TiO2 and ZnO nanostructures played the role of sensor layers. Investigations have proved that the elaborated resistance structures with TiO2 and ZnO layers are sensitive to the presence of NO2 in the atmosphere of synthetic air. The resistance of the structure amounted to about 20Ω in the case of ZnO structures and to about 200Ω in the case of TiO2 structures. The investigations confirmed that resistance structures with ZnO and TiO2, exposed to the effect of nitrogen dioxide in the atmosphere of synthetic air changes their resistances relatively fast. This indicates that such structures might be practically applied in sensors of nitrogen dioxide ensuring a short time of response.

Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor

“…Therefore, in recent years increased interest in novel oxide materials with given and strictly specified properties has been observed [2][3][4][5]. Such materials form an entirely new field of science, called Transparent Electronics.…”

Gas Sensors Based on ZnO Structures

“…nanograins, nanorods and ower-shaped agglomerates, etc. [9,10]. Such materials are characterized by a relatively high value of the energy gap, amounting to E g ≈ 3.2 eV [1113].…”

A study of gas sensing properties of ZnO nanostructures activated by UV light

“…The sensor response to low concentrations of NO 2 in different conditions is presented and studied. Structure responses to NO 2 are compared and discussed in two different carrier gases (air and pure nitrogen) activated by means of high temperature or UV light.ZnO nanostructures were obtained by the chemical method which was described in our earlier paper [3]. Obtained material was deposited on an interdigital transducer (50 nm gold layer, 5μm distance and width of electrodes, substrate: 10mm×10mm Si plate with 1μm SiO 2 layer).…”

“…It can be applied in resistance and optical gas sensors to detect gases such as: NO 2 , H 2 , NH 3 , as well as humidity and other changes [1][2][3][4]. To stabilize the operation, ZnO based sensors require activation by high temperature (≥200˚C) or by UV radiation [5].…”

“…ZnO nanostructures were obtained by the chemical method which was described in our earlier paper [3]. Obtained material was deposited on an interdigital transducer (50 nm gold layer, 5μm distance and width of electrodes, substrate: 10mm×10mm Si plate with 1μm SiO 2 layer).…”