2015
DOI: 10.4302/plp.2015.2.07
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A study of gas sensing properties of ZnO nanostructures activated by UV light

Abstract: Abstract-In this paper the response of resistance gas sensors is investigated, based on zinc oxide nanostructures to NO2. The research is focused on the influence of ultraviolet light on the operation of such sensors at room temperature. Comparative experiment results are presented and discussed for thermal (200˚C) and UV (LED: λ=390 nm) activation in different carrier gases (air and nitrogen).Zinc oxide (ZnO) is widely used as a gas sensing material. It can be applied in resistance and optical gas sensors to … Show more

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Cited by 5 publications
(4 citation statements)
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“…In recent years, attempts have been made to solve this problem using UV radiation [ 30 , 31 , 32 ]. The application of UV allows for the gas detection at room temperature (RT), but response times under these conditions are often unsatisfactorily long [ 30 , 32 , 33 ]. There have only been a few studies discussing the combination of the UV illumination of the sensor at higher temperature and the mechanisms responsible for operation under such conditions [ 34 , 35 ].…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, attempts have been made to solve this problem using UV radiation [ 30 , 31 , 32 ]. The application of UV allows for the gas detection at room temperature (RT), but response times under these conditions are often unsatisfactorily long [ 30 , 32 , 33 ]. There have only been a few studies discussing the combination of the UV illumination of the sensor at higher temperature and the mechanisms responsible for operation under such conditions [ 34 , 35 ].…”
Section: Introductionmentioning
confidence: 99%
“…Also the humidity effect on the gas sensing structures has to be taken into account due to its different values under real operating conditions [28]. Many publications emphasized the potential of ZnO nanostructures in gas sensors [8,25,27,29,30]. …”
Section: Introductionmentioning
confidence: 99%
“…This is primarily due to the high mobility of conduction electrons in the material and good chemical and thermal stability under operating conditions [4]. It is a direct band gap wurtzite type semiconductor with band gap energy of 3.37 eV at room temperature, and a very large exciton binding energy of about 60 meV.…”
Section: Introductionmentioning
confidence: 99%